A High-Sensitivity AlGaN/GaN HEMT Terahertz Detector With Integrated Broadband Bow-Tie Antenna

Abstract

Many emerging applications in the terahertz (THz) frequency range demand highly sensitive, broadband detectors for room-temperature operation. Field-effect transistors with integrated antennas for THz detection (TeraFETs) have proven to meet these requirements, at the same time offering great potential for scalability, high-speed operation, and functional integrability. In this contribution, we report on an optimized field-effect transistor with integrated broadband bow-tie antenna for THz detection (bow-tie TeraFET) and compare the detector s performance to other state-of-the-art broadband THz detector technologies. Implemented in a recently developed AlGaN/GaN MMIC process, the presented TeraFET shows a more than twice performance improvement compared to previously fabricated AlGaN/GaN-HEMT-based TeraFETs. The detector design is the result of detailed modeling of the plasma-wave-based detection principle embedded in a full-device detector model to account for power coupling of the THz radiation to the intrinsic gated FET channel. The model considers parasitic circuit elements as well as the high-frequency impedance of the integrated broadband antenna, and also includes optical losses from a silicon substrate lens. Calibrated characterization measurements have been performed at room temperature between 490 and 645\xa0GHz, where we find values of the optical (total beam power referenced) noise-equivalent power of 25 and ${\\text{31 pW}}/\\surd{\\text{Hz}}$ at 504 and 600\xa0GHz, respectively, in good agreement with simulation results. We then show the broadband detection capability of our AlGaN/GaN detectors in the range from 0.2 to 1.2\xa0THz and compare the TeraFETs’ signal-to-noise ratio to that of a Golay cell and a photomixer. Finally, we demonstrate an imaging application in reflection geometry at 504\xa0GHz and determine a dynamic range of >40\xa0dB.