2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) | 2019
Electrically Driven Single-Photon Sources Based on Color Centers in Silicon Carbide: Pursuing Gigacount-Per-Second Emission Rates
Abstract
Efficient optoelectronic devices exploiting the quantum nature of light are in great demand for the emerging quantum information technologies, such as unconditionally secure communication lines and optical quantum computers. An essential element of these devices is a true single-photon source, which produces a train of optical pulses at a high repetition rate so that each pulse contains one and only one photon. However, it is still a challenge to obtain bright, stable, and efficient single-photon emission under ambient conditions. Color center in diamond, which are currently considered to be the most promising candidates for room-temperature applications [1], show electroluminescence rates lower than 50 kcps [2,3], and the recent theoretical studies predict that such numbers can hardly exceed 2 Mcps at room temperature [4–7], which is not sufficient for high-performance quantum information devices.