GaAs material photorefractive response time measurement based on spectral probe

Abstract

The ultrafast all-optical solid-state framing camera(UASFC) technique is a new diagnostic method based on the semiconductor photorefractive effect. The ultra-fast response characteristics of this method are mainly determined by the response time of the semiconductor material s photorefractive index change. How to quickly and accurately measure the photorefractive index response time of semiconductor materials is an important step in the development of all-optical solid ultra-fast diagnostic chip. In this paper, the 100fs pulsed laser is divided into two beams. One of which is used as excitation light to generate pulsed X-ray source; the other beam is measured as a spectral probe light. Through the test of GaAs material, the response time of the refractive index change of GaAs material was less than 5ps, which laid a foundation for further optimization experiment and accurate measurement.