Electromagnetic Modeling of a Monolithic Microwave Integrated Circuit Attenuator on AlGaN/GaN Heterostructures

Abstract

Abstract The features of the electromagnetic simulation of an SSI microwave 5-bit attenuator for the 5–15 GHz frequency range on AlGaN/GaN heterostructures are reviewed. The implementation of the device envisages the use of contacts with capacitive coupling. Attenuator provides 1, 2, 4, 8 and 16 dB attenuation in the 5 to 15 GHz bandwidth and control of the signal’s amplitude in the range from 0 to 31 dB in 1 dB steps and initial losses of up to 5 dB.