Electronic properties of double GaAlAs/GaAs and GaInAs/GaAs quantum wells as dependent on well width

Abstract

Herein, the electronic properties of double Ga 1-x Al x As/GaAs quantum wells (A model) and Ga 1-x In x As/GaAs quantum wells (B model) have been examined related to the well width. The wave functions, the subband energies and the probability densities of these systems under effective mass approach were determined by the solution of Schrodinger equation. According to the results obtained, the major diversities of A and B models are the effective mass and the energy gap. For A model, GaAlAs is the barrier and GaAs is the well. Whereas for B model, GaAs is the barrier and GaInAs is the well. Also, the potential depth and the energy levels of A model are continuously smaller than of B model. The well width has a great impact on the electronic features of the double quantum well (DQW). These features have a convenient attention for the purpose of adjustable semiconductor devices.