The Effect of Annealing Temperature On The Structural and Optical Properties of Si/SiO2 Composites Synthesized By Thermal Oxidation of Silicon Wafers

Abstract

In this article, silicon wafers were thermal treated in air at temperatures from 800 to 1200\xa0°C. The annealed samples were investigated using X-ray diffraction, FTIR and optical reflection spectroscopy. Unique result obtained includes that possibility of employing the thermal oxidation of silicon to obtain Si/SiOx composites with various energy gaps suitable for the manufacture of semiconductor devices. In addition, we found that the splitting of longitudinal optical and transverse optical stretching motions effect on the relative absorption coefficient. On the other hand, it has been found that, the intensity of the silicon peak in XRD spectra is proportional to the relative absorption coefficient of amorphous silicon oxide.