A New Strategy for Fabricating Low Haze p-Type Cui Film

Abstract

\n As an intrinsic p-type transparent conductor with a wide band gap of 3.1 eV, γ-CuI full of potential has gradually attracted the attention of researchers. However, γ-CuI films deposited by various techniques generally present high haze with a frosted-glass-like appearance, significantly hampering the device’s performance. Herein, a new strategy is proposed, where truly p-type CuI thin films with low haze were successfully synthesized at room temperature. The specular transmittance of CuI film above 85% in the visible region (400-800 nm) can be achieved. The haze of the as-prepared γ-CuI films can be as low as 0.7%. Meanwhile, the as-prepared CuI film possesses a FOM as high as 230 MΩ -1 . This ideal stable p-type optoelectronic performance was a significant achievement among various typical p-type transparent conductive films.