Легированный кремнием GaSb, выращенный методом ГФЭМОС в широком диапазоне соотношений V/III

Abstract

\n Charachterization of Si-doped GaSb epitaxial layers grown by metal organic vapor phase epitaxy is presented. Samples are grown at constant SiH4 flow with a TMSb/TEGa ratio ranged from 1 to 50. X-ray diffraction, Raman scattering, photoluminescence, resistivity, free carrier concentration and their mobility are studied. \n