High performance 4T-2R Non-Volatile TCAM with NMOS Booster

Abstract

This paper proposes a 4T-2R non-volatile ternary contents addressable memory (nvTCAM) cell structure. The proposed nvTCAM has a fast match line(ML) development and improved sensing margin when compared to the conventional nvTCAM. The NMOS Booster improves the match line sensing speed by fast determining the data stored in the nvTCAM. Simulation results show that ML sensing delay is reduced by 20%. The proposed cell structure operates properly with NVM with resistance ratio as low as 3. The proposed 4T-2R nvTCAM with NMOS Booster Cell was evaluated at 180nm CMOS process and 1.2V supply voltage.