2019 Symposium on VLSI Circuits | 2019

A 75.8dB-SNDR Pipeline SAR ADC with 2nd-order Interstage Gain Error Shaping

 
 

Abstract


This paper presents a low-cost gain error shaping (GES) technique that can substantially suppress the in-band interstage gain error in pipeline ADCs. It works for both closed-loop and open-loop amplification. A prototype ADC with the proposed 2nd-order GES technique in 40nm CMOS achieves 75.8dB SNDR over 12.5MHz BW while operating at 100MS/s and consuming 1.54mW. It achieves 174.9dB Schreier FoM. The GES-related hardware occupies less than 2% of the core area.

Volume None
Pages C68-C69
DOI 10.23919/VLSIC.2019.8778032
Language English
Journal 2019 Symposium on VLSI Circuits

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