Archive | 2019

A Review Article on Carbon Nanotube Field Effect Transistors Technology

 
 

Abstract


Silicon industry is evolving and scaling down day by day. With the minimized size of the transistor, the craving for high performance devices also takes place. For MOSFET, size is limited and below some dimensions the device will undergo leakage current, parasitic capacitances, power dissipation issues. Hence, researchers has implemented a novel device named, CNTFET (Carbon NanoTube Field Effect Transistor). CNTFET provides high carrier mobility, reduction in delay and power consumption, better noise margin, suitable contact resistance and fast switching speed. In this review paper, different structures, CNTFET classifications, chiral vector and chirality has been discussed.

Volume 8
Pages 56-62
DOI 10.30732/rjet.20190801007
Language English
Journal None

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