Dynamic Switching of 3kV 4H-SiC Charge-Balanced Junction Barrier Schottky (JBS) Diodes

Abstract

We have performed detailed dynamic switching measurements for 3kV 4H-SiC Charge-Balanced (CB) junction barrier Schottky (JBS) diodes [1,2] and studied their dependence on device design parameters. We have done forward and reverse recovery characterizations and found unusual switching characteristics in these CB-JBS diodes. These switching characteristics are explained based on the design and layout of the devices.