Comparative Study of Gas Ratio on Indium Nitride Thin Films Grown on Flexible Substrates Prepared by Reactive Sputtering Method

Abstract

In this report, indium nitride (InN) thin films were deposited on kapton polyimide flexible substrate by reactive radio frequency (RF) sputtering method using an indium target in a mixture of Ar and N2 gases. The effects of the Ar:N2 gas ratio on the properties of the deposited InN thin films were investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), and energy dispersive (EDX) spectroscopy. The XRD revealed that the deposited films composed of polycrystalline wurtzite InN. The FESEM and AFM surface morphologies showed smooth and uniform surface of gas ratio at 60:40 compare to others gas ratio. Overall, the characteristics of the InN thin films were effectively improved with combination the N2:Ar gas ration at 60:40. The results showed that the gas ratio plays an important role in improving the properties of the InN thin films.