Design and Implementation of Travelling Wave Electrode Silicon Mach Zehnder Modulator based Plus-Shaped PN Junction Phase Shifter for Data Centre Application

Abstract

Silicon Mach-Zehnder modulator (SMZM)is fit to high-contrast optical modulation in wide ranges ofspectral along 50 Gbaud symbol rates. Some times itsefficiency is lower in wavelength about 1.31 μm than 1.55μm, it can decrease the Phase Shifter (PS) efficiency andoccupies large amount of data rates. In this manuscript,the plus-shaped PN junction Phase Shifter (PS) isproposed. The major aim of the proposed work is to createan optimum CD type plus-shaped PS including lesser VπL.Silicon MZM including proposed PS can satisfy thehigher-speed data transmission requirement on theapplications of inter with intra data centre. The objectiveof this method is to increase the modulation efficiency(ME) by decreasing the optical loss for higher-speed datarate (DR). To get greater efficiency of modulation, the Pdoped region width and the thickness of doped regions arediffer under slabs. The simulation analysis of circuit-levelis executed in the proposed PS acquired at travelling waveelectrode (TWE) silicon Mach Zehnder modulator. In 80Gbps, the 12.39 dB maximal extinction ratio along8.67×10-8 bit error rate (BER) was acquired in VπLπ of1.05 V.cm for 3.5 mm PS length. The measured intrinsicbandwidth of 3 dB denotes ~38 GHz, whereas thetransmission energy per bit denotes 1.71pJ/bit. Moreexamines are carried out to recognize the maximalcommunication distance using proposed PS under SMZMfor the requirements of data centre.