Noise and Linearity of High-Speed SiGe HBT Cells in CE and CB Configuration

Abstract

High-frequency (h.f.) noise and linearity of high-speed power cells consisting of advanced SiGe heterojunction bipolar transistors (HBTs) in common-emitter (CE) and common-base (CB) configuration were investigated. The cells features optimized metallization interconnections to reduce parasitics. DC, RF, and nonlinear largesignal characteristics as well as noise parameters were measured, simulated and analyzed. The observed low noise and output power linearity of the SiGe HBT power cells in CB operation makes them suitable for low-noise and high-frequency power applications. Index-Terms: Compact modeling, heterojunction bipolar transistor, linearity, noise parameters, SiGe HBT.