Electrical transfer, carrier concentration and surface charge analysis of a single-gated cylindrical channel junctionless p-type nanowire field-effect transistor for sensor applications

Abstract

The primary goal of the junctionless nanowire FET is to eliminate the struggle of making junctions and doping in short channel nanowire FETs. Junctions and doping are totally removed while taking the junctionless nanowire FET. In this work, we have modeled and analyzed various p-type junctionless nanowire FETs without doping in junctions. The materials used in this analysis were Silicon (Si), Germanium (Ge), Indium Phosphide (InP), Gallium Arsenide (GaAs), and Al(x)Ga(1−x)As. The dimensions of the p-type cylindrical nanowire channel were 25 nm long and 10 nm diameter. The electrical transfer studies and carrier concentration analysis are displayed. In addition, surface charge and potential analysis of a cylindrical channel are validated. The InP nanowire exhibits a higher surface potential. This kind of high response surface potential can be used for the fabrication of nanostructure-based sensors.