Simulation of a Ballistic SW-CNTFET with Coaxial Geometry: Numerical Approach to Determine the impact of Gate Oxide Thickness on the Performance

Abstract

Carbon Nanotube Field Effect Transistors (CNTFETs) are being proposed as candidates for nextgeneration integrated circuit technology replacing conventional MOSFET devices. It is a suitable nanoelectronic device which is used for high speed and low power design applications which include analog and digital circuits. In this paper, a single wall carbon nanotube field effect transistor (SW-CNTFET) with a coaxial structure in the ballistic regime has been studied and its performance parameters discussed. Numerical simulations were performed based on Natori approach. The various device metrics in consideration are drive current (Ion), Ion/Ioff ratio, output conductance (gd), transconductance (gm), gain, carrier injection velocity, subthreshold swing and drain induced barrier lowering (DIBL). In particular, the influences of gate oxide thickness on the short-channel effects are presented in detail. Also, the dependence of sub-threshold swing and DIBL on the gate control parameter has been discussed.