Monolithic integration of E/D-mode GaN MIS-HEMTs on ultrathin-barrier AlGaN/GaN heterostructure on Si substrates

Abstract

Monolithically integrated enhancement/depletion-mode (E/D-mode) GaN-based metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) and inverters, were fabricated on an ultrathin-barrier (UTB) AlGaN/GaN heterostructure grown on Si substrates. By employing a graded AlGaN back barrier in the UTB-AlGaN/GaN heterostructure, a high threshold voltage (V TH) of +3.3 V is achieved in the E-mode MIS-HEMTs. The fabricated MIS-HEMT inverter features a high logic swing voltage of 7.76 V at a supply voltage of 8 V, a small V TH—hysteresis as well as—deviation less than 0.2 V. The UTB AlGaN/GaN-on-Si technology provides a good platform for integration of MIS-gate-based drivers and power transistors.