Analysis of the Transport Process Providing Spin Injection through an Fe/AlGaAs Schottky Barrier
A.T. Hanbicki, O.M.J. van t Erve, R. Magno, G. Kioseoglou, C.H. Li, B.T. Jonker, G. Itskos, R. Mallory, M. Yasar, A. Petrou
Abstract
Electron spin polarizations of 32% are obtained in a GaAs quantum well via electrical injection through a reverse-biased Fe/AlGaAs Schottky contact. An analysis of the transport data using the Rowell criteria demonstrates that single step tunneling is the dominant transport mechanism. The current-voltage data show a clear zero-bias anomaly and phonon signatures corresponding to the GaAs-like and AlAs-like longitudinal-optical phonon modes of the AlGaAs barrier, providing further evidence for tunneling. These results provide experimental confirmation of several theoretical analyses indicating that tunneling enables significant spin injection from a metal into a semiconductor.