Electron Spin Resonance Transistors for Quantum Computing in Silicon-Germanium Heterostructures
Rutger Vrijen, Eli Yablonovitch, Kang Wang, Hong Wen Jiang, Alex Balandin, Vwani Roychowdhury, Tal Mor, David DiVincenzo
Abstract
We apply the full power of modern electronic band structure engineering and epitaxial heterostructures to design a transistor that can sense and control a single donor electron spin. Spin resonance transistors may form the technological basis for quantum information processing. One and two qubit operations are performed by applying a gate bias. The bias electric field pulls the electron wave function away from the dopant ion into layers of different alloy composition. Owing to the variation of the g-factor (Si:g=1.995, Ge:g=1.563), this displacement changes the spin Zeeman energy, allowing single-qubit operations. By displacing the electron even further, the overlap with neighboring qubits is affected, which allows two-qubit operations. Certain Silicon-Germanium alloys allow a qubit spacing as large as 200 nm, which is well within the capabilities of current lithographic techniques. We discuss manufacturing limitations and issues regarding scaling up to a large size computer.