Quantum critical behaviour of the plateau-insulator transition in the quantum Hall regime
A. de Visser, L.A. Ponomarenko, G. Galistu, D.T.N. de Lang, A.M.M. Pruisken, U. Zeitler, D. Maude
Abstract
High-field magnetotransport experiments provide an excellent tool to investigate the plateau-insulator phase transition in the integral quantum Hall effect. Here we review recent low-temperature high-field magnetotransport studies carried out on several InGaAs/InP heterostructures and an InGaAs/GaAs quantum well. We find that the longitudinal resistivity
ρ
xx
near the critical filling factor
ν
c
~ 0.5 follows the universal scaling law
ρ
xx
(ν,T)∝exp[−Δν/(T/
T
0
)
κ
]
, where
Δν=ν−
ν
c
. The critical exponent
κ
equals
0.56±0.02
, which indicates that the plateau-insulator transition falls in a non-Fermi liquid universality class.