A. Attaf

Structural, optical and electrical properties of Sn x S y thin films grown by spray ultrasonic

Tin sulfide(Sn x S y ) thin films were prepared by a spray ultrasonic technique on glass substrate at 300℃. The influence of deposition time t =2, 4, 6, 8 and 10 min on different properties of thin films, such as(XRD), photoluminescence(PL) and(UV) spectroscopy visible spectrum and four-point were investigated. X-ray diffraction showed that thin films crystallized in SnS 2 , SnS, and Sn 2 S 3 phases, but the most prominent one is SnS 2 . The results of the(UV) spectroscopy visible spectrum show that the film which was deposited at 4 min has a large transmittance of 60% in the visible region. The photoluminescence spectra exhibited the luminescent peaks in the visible region, which shows its potential application in photovoltaic devices. The electrical resistivity( ρ ) values of Sn x S y films have changed from 8.1×10 -4 to 1.62Ω·cm with deposition time.

Correlation between the structural, morphological, optical, and electrical properties of In2O3 thin films obtained by an ultrasonic spray CVD process

Indium oxide (In 2 O 3 ) thin films are successfully deposited on glass substrate at different deposition times by an ultrasonic spray technique using Indium chloride as the precursor solution; the physical properties of these films are characterized by XRD, SEM, and UV-visible. XRD analysis showed that the films are polycrystalline in nature having a cubic crystal structure and symmetry space group Ia3 with a preferred grain orientation along the (222) plane when the deposition time changes from 4 to 10 min, but when the deposition time equals 13 min we found that the majority of grains preferred the (400) plane. The surface morphology of the In 2 O 3 thin films revealed that the shape of grains changes with the change of the preferential growth orientation. The transmittance improvement of In 2 O 3 films was closely related to the good crystalline quality of the films. The optical gap energy is found to increase from 3.46 to 3.79 eV with the increasing of deposition time from 4 to 13 min. The film thickness was varied between 395 and 725 nm. The film grown at 13 min is found to exhibit low resistivity (10 -2 Ω·cm), and relatively high transmittance (~ 93%).

Properties of n-type SnO2 semiconductor prepared by spray ultrasonic technique for photovoltaic applications

Transparent conducting n-type SnO2 semiconductor films were fabricated by employing an inexpensive, simplified spray ultrasonic technique using an ultrasonic generator at deferent substrate temperatures (300, 350, 400, 450 and 500 °C). The structural studies reveal that the SnO2 films are polycrystalline at 350, 400, 450, 500 °C with preferential orientation along the (200) and (101) planes, and amorphous at 300 °C. The crystallite size of the films was found to be in the range of 20.9–72.2 nm. The optical transmittance in the visible range and the optical band gap are 80% and 3.9 eV respectively. The films thicknesses were varied between 466 and 1840 nm. The resistivity was found between 1.6 and 4 × 10−2 Ωcm. This simplified ultrasonic spray technique may be considered as a promising alternative to a conventional spray for the massive production of economic SnO2 films for solar cells, sensors and opto-electronic applications.

The synthesis and characterization of sprayed ZnO thin films: As a function of solution molarity

In the present paper, the structural, electrical and optical properties of zinc oxide thin films were studied as a function of solution molarity. The ZnO thin films were deposited on glass substrates via the ultrasonic spray technique at 350 ◦ C. Polycrystalline films with a hexagonal wurtzite structure with (100) and (002) preferential orientation corresponding to ZnO films were observed. The optimal values of the crystallite size of the ZnO films were observed with (002) plan in 0.4 and 0.5 mol/l of solution molarity. All films exhibit an average optical transparency about 85%, in the visible region. The shift of optical transmittance towards smaller wavelength can be showed by the decrease of band gap caused by the change of crystallite size in polycrystalline. The maximum electrical conductivity of ZnO films was found of 2.29 (� .cm) -1 with 0.075 mol/l of solution molarity.

Solution flow rate influence on ZnS thin films properties grown by ultrasonic spray for optoelectronic application

The aim of this work is to investigate the dependence of ZnS thin films structural and optical properties with the solution flow rate during the deposition using an ultrasonic spray method. The solution flow rate ranged from 10 to 50 mL/h and the substrate temperature was maintained at 450 °C. The effect of the solution flow rate on the properties of ZnS thin films was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical transmittance spectroscopy (UV–V) and the four-point method. The X-ray diffraction analysis showed that the deposited material was pure zinc sulphide, it has a cubic sphalerite structure with preferential orientation along the (111) direction. The grain size values were calculated and found to be between 38 to 82 nm. SEM analysis revealed that the deposited thin films have good adherence to the substrate surfaces, are homogeneous and have high density. The average transmission of all films is up more than 65% in the range wavelength from 200 to 1100 nm and their band gap energy values were found between 3.5–3.92 eV. The obtained film thickness varies from 390 to 1040 nm. Moreover, the electric resistivity of the deposited films increases with the increasing of the solution flow rate between 3.51 × 105 and 11 × 105 Ω·cm.

Modulation of Physical Properties of Sprayed ZnO Thin Films by Substrate Temperature for Optical Applications

We investigated the structural, electrical and optical properties of zinc oxide thin films as the n-type semiconductor. In the present paper, the effect of substrate temperature on the synthesis of ZnO thin films was carried out from 250∘C to 500∘C. ZnO thin films were deposited on glass substrates via ultrasonic spray technique with 0.2mol/L of zinc acetate dehydrate. The crystal quality of the thin films was analyzed by X-ray diffraction which results in modified substrate temperature. The optical transmittance and electrical conductivity measurements were carried out by Ultraviolet-visible spectrophotometer and four-point methods, respectively. Polycrystalline films with a hexagonal wurtzite structure with (100) and (002) preferential orientation corresponding to ZnO films were observed at high temperature. The optimal values of the average crystallite size of the ZnO films under consideration are observed beginning with 350∘C of substrate temperature. All films exhibit an average optical transparency of about 85% in the visible region. The shift of optical transmittance toward higher wavelength can be shown by the increase of bandgap energy from 3.245eV to 3.281eV with increasing substrate temperature of 250–500∘C. The observed Urbach energy of ZnO thin films decreases from 0.11311eV to 0.04974eV. At a high temperature, the electrical conductivity of ZnO films was increased from 3.87×10−3 to 41.58 (Ω.cm)−1 with the increasing substrate temperature from 350∘C to 500∘C.

Physical properties study of Sb2O3-PbO-MnO ternary system

Vitreous system based on antimony oxide Sb2O3 has been investigated. The influence of MnO substitution on the mechanical and physical properties in the (80-X) Sb2O3–20 PbO–X MnO system has been studied. Vickers hardness, density, molar volume, Young modulus, glass temperature transition, infrared and UV transmission spectra depend on the MnO concentration. Crack analysis of the glass surface under indentor deformation shows the tenacity changes according to the MnO concentration.