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Interface state density and dielectric properties of Au/n-GaP Schottky diode

The temperature and frequency dependent capacitance and conductance measurements of Au/n-GaP Schottky diode were carried out in the 200–400 K and 1 kHz–1 MHz range, under different bias voltages. The obtained interface state density (Nss) and the carrier life time (τ) were evaluated from the measured data. The values of Nss and τ depend strongly on the applied voltage and temperature. The effect of the interface states of the device under different conditions was also analyzed. The series resistance (Rs) of the device was evaluated under different frequencies and temperature conditions using Nicollian and Goetzberger method. The dielectric parameters like dielectric constant (e′), dielectric loss (e″), loss tangent (tan δ), and ac electric conductivity (σac) were analyzed under complex permittivity (e*) formalism. The variations of e′ and e″ with frequency and temperature are attributed to the interfacial polarization and the temperature induced restructuring and reordering of interface state density. The...

Recovery of Electrical Characteristics of Au/n-Si Schottky Junction Under

The electrical transport characteristics of a Au/n-Si metal-semiconductor Schottky barrier junction under exposure to 60Co gamma rays have been reported in this paper. The role of energy loss mechanisms in the Schottky junction due to gamma irradiation is studied using the current-voltage (I-V ) and capacitance-voltage (C-V ) measurements. The electrical characteristics were measured at various doses of gamma by incrementally increasing the exposure from 0.85 Mrad (Si) to 340 Mrad (Si) to systematically study the dose effects on electrical transport across the Schottky interface. After irradiation, the ideality factor was found to decrease initially up to a dose of 17 Mrad (Si), and thereafter, it started increasing. At a dose of 340 Mrad (Si), the characteristics of the Schottky interface were found to recover toward the pristine characteristics. The recovery effect is attributed to annealing of interface defects due to the electronic energy loss Se of gamma ray photons.