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Featured researches published by A. Cingolani.


Solid State Communications | 1986

First order Raman scattering in GaN

A. Cingolani; M. Ferrara; M. Lugarà; Gaetano Scamarcio

Abstract Experimental evidence of A1 and E1 longitudinal optical modes in Raman spectra of GaN is reported for the first time. The static dielectric constant and the effective charge are also calculated, showing the ionic character of GaN.


Solid State Communications | 1982

Stimulated photoluminescence of CdTe

A. Cingolani; M. Ferrara; M. Lugarà

Abstract Emission spectra of CdTe at low temperature under high intensity optical pumping by means of a tunable dye laser are reported. We show that the optical gain process is enhanced when a high exciton density is achieved by means of quasi-resonant pumping. The mechanism responsible for the amplification process is found to be the well-known exciton-exciton scattering.


Solid State Communications | 1976

Optical gain in GaSe due to exciton-exciton recombination☆

I.M. Catalano; A. Cingolani; M. Ferrara; M. Lugarà; A. Minafra

Abstract Measurements of the optical gain spectrum in high quality GaSe are reported. The mechanism for light amplification has been investigated, giving evidence that the exciton-exciton scattering process is responsible for stimulated emission.


Solid State Communications | 1978

Stimulated emission of GaN under high one and two quantum excitation

I.M. Catalano; A. Cingolani; M. Ferrara; M. Lugarà; A. Minafra

Abstract Stimulated emission at 3.435 eV in GaN at 80 K is reported. This emission is attributed to a cooperative excitonic process and is observed only in undoped samples. One and two photon optical pumping has been used and optical gain of about 103 cm-1 has been measured.


Physica Scripta | 1988

Resonance Raman scattering in HfSe2 and HfS2

A. Cingolani; M. Lugarà; F Lévy

The energies of IR active A2u modes in both HfSe2 and HfS2 are not known, since it is experimentally difficult to perform IR spectroscopy measurements for E || c. The experimental results of our first and second order resonance Raman measurements show that A2u(TO) = 180cm−1 and A2u(LO) = 295cm−1 in HfS2; in HfSe2 we obtain A2u(TO) = 120cm−1 and A2u(LO) = 175cm−1. Our results are consistent with those theoretically calculated by means of the polarizable ion model.


Journal of Applied Physics | 1980

Stimulated emission and optical gain spectrum in highly excited CdSe

A. Cingolani; M. Ferrara; M. Lugarà

The stimulated emission from CdSe at 80 °K under nitrogen or dye laser excitation has been studied. Its dependence on the pumping laser wavelength, on the excitation intensity, and on the excited length of the sample has been investigated. Optical gain spectrum measurements confirm the attribution of the light amplification process to two different radiative mechanisms involving, respectively, the exciton‐exciton interaction and the electron‐hole plasma recombination, for a photoinjected electron‐hole density nc?1017 pairs/cm3.


Solid State Communications | 1979

Second harmonic generation in InSe

I.M. Catalano; A. Cingolani; Claudio Cali; S. Riva-Sanseverino

Abstract Experimental evaluation of non-linear susceptibility coefficient d22 for InSe, which is responsible for second harmonic generation in this material at 1.06 and 10.6 μm, is reported and the value compared with GaSe. At the CO2 laser frequency of oscillation, phase matching has been observed and a value of d22 almost equal to d15 for CdSe has been found. The InSe high transparency in the wavelength range 1.1–22 μm, the sizeable value of d22 and the possibility of reaching phase matching condition in the IR range make InSe a potential device for far IR frequency conversion.


Solid State Communications | 1976

Photoelectromagnetic effect in lead iodide

F. Adduci; A. Cingolani; M. Ferrara; M. Lugarà; A. Minafra

Abstract The photoelectromagnetic effect and the photoconductivity in PbI 2 layer compound have been studied by using a double modulation technique. The experimental results allow to estimate the lifetimes and the diffusion lengths of the majority and minority carriers.


Solid State Communications | 1976

Excitonic emission in highly excited lead iodine

F. Adduci; A. Cingolani; M. Ferrara; M. Lugarà; A. Minafra

Abstract Excitonic luminescence in PbI2 has been investigated in the temperature range between 77 and 300°K under high excitation by a nitrogen laser. A single emission band is observed which, at low pumping, is centered at the free exciton energy. When the excitation intensity is increased, the band broadens and shifts towards lower energies. These facts are interpreted on the basis of an exciton-electron interaction.


Solid State Communications | 1982

Non-parabolic band effect on two-photon absorption in ZnSe and CdTe

I.M. Catalano; A. Cingolani

Abstract Absolute two-photon absorption coefficients have been measured in ZnSe and CdTe single crystals by means of the two-channel normalization technique. Comparison between TPA experimental and theoretical values shows that the TPA, for 2 h ω ⪢ E g , is oddly influenced both by non-parabolicity and degeneracy of the energy bands.

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Gaetano Scamarcio

Instituto Politécnico Nacional

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F. Lévy

École Normale Supérieure

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