A. D. Caviglia

Superconducting interfaces between insulating oxides.

At interfaces between complex oxides, electronic systems with unusual electronic properties can be generated. We report on superconductivity in the electron gas formed at the interface between two insulating dielectric perovskite oxides, LaAlO3 and SrTiO3. The behavior of the electron gas is that of a two-dimensional superconductor, confined to a thin sheet at the interface. The superconducting transition temperature of ≅ 200 millikelvin provides a strict upper limit to the thickness of the superconducting layer of ≅ 10 nanometers.

Electric field control of the LaAlO3/SrTiO3 interface ground state

Interfaces between complex oxides are emerging as one of the most interesting systems in condensed matter physics. In this special setting, in which translational symmetry is artificially broken, a variety of new and unusual electronic phases can be promoted. Theoretical studies predict complex phase diagrams and suggest the key role of the charge carrier density in determining the systems’ ground states. A particularly fascinating system is the conducting interface between the band insulators LaAlO3 and SrTiO3 (ref. 3). Recently two possible ground states have been experimentally identified: a magnetic state and a two-dimensional superconducting condensate. Here we use the electric field effect to explore the phase diagram of the system. The electrostatic tuning of the carrier density allows an on/off switching of superconductivity and drives a quantum phase transition between a two-dimensional superconducting state and an insulating state. Analyses of the magnetotransport properties in the insulating state are consistent with weak localization and do not provide evidence for magnetism. The electric field control of superconductivity demonstrated here opens the way to the development of new mesoscopic superconducting circuits.

Tunable Rashba spin-orbit interaction at oxide interfaces.

The quasi-two-dimensional electron gas found at the LaAlO{3}/SrTiO{3} interface offers exciting new functionalities, such as tunable superconductivity, and has been proposed as a new nanoelectronics fabrication platform. Here we lay out a new example of an electronic property arising from the interfacial breaking of inversion symmetry, namely, a large Rashba spin-orbit interaction, whose magnitude can be modulated by the application of an external electric field. By means of magnetotransport experiments we explore the evolution of the spin-orbit coupling across the phase diagram of the system. We uncover a steep rise in Rashba interaction occurring around the doping level where a quantum critical point separates the insulating and superconducting ground states of the system.

Two-dimensional quantum oscillations of the conductance at LaAlO3/SrTiO3 interfaces.

We report on a study of magnetotransport in LaAlO3 /SrTiO3 interfaces characterized by mobilities of the order of several thousands cm2/V s. We observe Shubnikov-de Haas oscillations whose period depends only on the perpendicular component of the magnetic field. This observation directly indicates the formation of a two-dimensional electron gas originating from quantum confinement at the interface. From the temperature dependence of the oscillation amplitude we extract an effective carrier mass m* ≃ 1.45 m(e). An electric field applied in the back-gate geometry increases the mobility, the carrier density, and the oscillation frequency.

Influence of the growth conditions on the LaAIO3/SrTiO3 interface electronic properties

The effects of oxygen pressure during the growth of LaAlO3 on (001) SrTiO3, and of post-deposition annealing were investigated. While little influence on the structure was observed, the transport properties were found to depend on both growth pressure and annealing. For LaAlO3 layer thicknesses between 5 and 10 unit cells and growth pressures between 10− 4 and 10−2 mbar, the LaAlO3/SrTiO3 interfaces displayed similar metallic behavior with a sharp transition to a superconducting state. At an oxygen pressure of 10− 6 mbar oxygen vacancies were clearly introduced and extended deep into the SrTiO3 crystal. These vacancies could be removed by post-deposition annealing in 0.2 bar of O2 at ~530 °C. At a growth pressure of 10− 4 mbar, the electronic properties of samples with ultra-thin LaAlO3 layers (2 to 3 unit cells thick) were found to depend markedly on the post-annealing step.

Ultrafast Strain Engineering in Complex Oxide Heterostructures

We report on ultrafast optical experiments in which femtosecond midinfrared radiation is used to excite the lattice of complex oxide heterostructures. By tuning the excitation energy to a vibrational mode of the substrate, a long-lived five-order-of-magnitude increase of the electrical conductivity of NdNiO(3) epitaxial thin films is observed as a structural distortion propagates across the interface. Vibrational excitation, extended here to a wide class of heterostructures and interfaces, may be conducive to new strategies for electronic phase control at THz repetition rates.

Anisotropy of the superconducting transport properties of the LaAlO3/SrTiO3 interface

The superconducting transport properties of the conducting LaAlO3/SrTiO3 interface have been investigated in perpendicular and parallel magnetic fields. A large anisotropy in the transport properties is measured and the two-dimensional nature of the superconducting gas is confirmed. Analyses of the resistance versus temperature and magnetic field, as well as of the correlation length as a function of the magnetic field close to the superconducting critical temperature (about 200 mK), yield an estimate of ∼10 nm for the superconducting layer thickness.

Rashba induced magnetoconductance oscillations in the LaAlO 3 -SrTiO 3 heterostructure

We report measurements of the normal state in-plane magnetoconductance in gated LaAlO

Spatially resolved ultrafast magnetic dynamics initiated at a complex oxide heterointerface

_3

In-plane electronic confinement in superconducting LaAlO3/SrTiO3 nanostructures

-SrTiO