A. Dorokhov

Design and performance of the silicon sensors for the CMS barrel pixel detector

The CMS experiment at the LHC includes a hybrid silicon pixel detector for the reconstruction of charged tracks and of the interaction vertices. The barrel region consists of n-in-n sensors with 100X150 um^2 cell size processed on diffusion oxygenated float zone silicon. A biasing grid is implemented and pixel isolation is achieved with the moderated p-spray technique. An extensive test program was carried out on the H2 beam line of the CERN SPS. In this paper we describe the sensor layout, the beam test setup and the results obtained with both irradiated and non-irradiated prototype devices. Measurements of charge collection, hit detection efficiency, Lorentz angle and spatial resolution are presented.

Simulation of heavily irradiated silicon pixel sensors and comparison with test beam measurements

Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes free carrier trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in the ISE TCAD software can be tuned to produce a double peak electric field which describes the data reasonably well. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of charge trapping observed in the data.

Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors

Abstract We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5 × 10 14 to 5.9 × 10 14 n eq / cm 2 . The model correctly predicts the variation in the profiles as the temperature is changed from - 10 to - 25 ∘ C . The measured charge collection profiles are inconsistent with the linearly varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon.

Tests of silicon sensors for the CMS pixel detector

The tracking system of the CMS experiment, currently under construction at the Large Hadron Collider (LHC) at CERN (Geneva, Switzerland), will include a silicon pixel detector providing three spacial measurements in its final configuration for tracks produced in high energy pp collisions. In this paper we present the results of test beam measurements performed at CERN on irradiated silicon pixel sensors. Lorentz angle and charge collection efficiency were measured for two sensor designs and at various bias voltages.

Study of the Hamamatsu avalanche photodiode at liquid nitrogen temperatures

Abstract Dependence of the gain and the dark current on bias voltage, has been studied for the S8148 Hamamatsu avalanche photodiode (APD) over a wide range of temperatures. It was found that at T=108 K this APD can operate at a gain close to 10xa0000. At T=108 K the combination of the S8148 APD operated in proportional mode and the low noise amplifier allows photon counting with high efficiency, while keeping the noise count rate at a relatively low level.

Position dependence of charge collection in prototype sensors for the CMS pixel detector

This paper reports on the sensor R&D activity for the CMS pixel detector. Devices featuring several design and technology options have been irradiated up to a proton fluence of 1/spl times/10/sup 15/ n/sub eq//cm/sup 2/ at the CERN PS. Afterward, they were bump bonded to unirradiated readout chips and tested using high energy pions in the H2 beam line of the CERN SPS. The readout chip allows a nonzero suppressed full analogue readout and therefore a good characterization of the sensors in terms of noise and charge collection properties. The position dependence of signal is presented and the differences between the two sensor options are discussed.

Radiation tolerance of a column parallel CMOS sensor with high resistivity epitaxial layer

CMOS Monolithic Active Pixel Sensors (MAPS) demonstrate excellent performances in the field of charged particle tracking. A single point resolution of 1–2 μm and a detection efficiency close to 100% were routinely observed with various MAPS designs featuring up to 106 pixels on active areas as large as 4 cm2[1]. Those features make MAPS an interesting technology for vertex detectors in particle and heavy ion physics. In order to adapt the sensors to the high particle fluxes expected in this application, we designed a sensor with fast column parallel readout and partially depleted active volume. The latter feature was expected to increase the tolerance of the sensors to non-ionizing radiation by one order of magnitude with respect to the standard technology. This paper discusses the novel sensor and presents the results on its radiation tolerance.

Fluence Dependence of Charge Collection of irradiated Pixel Sensors

Abstract The barrel region of the CMS pixel detector will be equipped with “n-in-n” type silicon sensors. They are processed on diffusion oxygenated float zone (DOFZ) material, use the moderated p-spray technique for inter pixel isolation and feature a bias grid. The latter leads to a small fraction of the pixel area to be less sensitive to particles. In order to quantify this inefficiency prototype pixel sensors irradiated to particle fluences between 4.7 × 10 13 and 2.6 × 10 15 n eq / cm 2 have been bump bonded to un-irradiated readout chips and tested using high energy pions at the H2 beam line of the CERN SPS. The readout chip allows a non-zero suppressed analog readout and is therefore well suited to measure the charge collection properties of the sensors. In this paper we discuss the fluence dependence of the collected signal and the particle detection efficiency. Further the position dependence of the efficiency is investigated.

Recent progress on cooled avalanche photodiodes for single photon detection

Abstract Recent results on the properties of cooled avalanche photodiodes for single photon detection are presented. Results from Hamamatsu silicon photodiodes, originally developed as radiation-hard photodetectors for high energy physics experiments, are extremely encouraging. Gains of approximately 10,000 can be achieved with the APD operating in proportional mode. Together with a low noise amplifier they allow photon counting with extremely high efficiency and very low noise making cold APDs almost ideal single photon detectors. Operation of APDs in Geiger mode is also reported, together with measurements of detection efficiency and noise as function of operating voltage. Prospects and hopes for future work are briefly summarized.

MISTRAL & ASTRAL: two CMOS Pixel Sensor architectures suited to the Inner Tracking System of the ALICE experiment

A detector, equipped with 50 μm thin CMOS Pixel Sensors (CPS), is being designed for the upgrade of the Inner Tracking System (ITS) of the ALICE experiment at LHC. Two CPS flavours, MISTRAL and ASTRAL, are being developed at IPHC aiming to meet the requirements of the ITS upgrade. The first is derived from the MIMOSA28 sensor designed for the STAR-PXL detector. The second integrates a discriminator in each pixel to improve the readout speed and power consumption. This paper will describe in details the sensor development and show some preliminary test results.