A. Fert

Nucleation, stability and current-induced motion of isolated magnetic skyrmions in nanostructures

Magnetic skyrmions are topologically stable spin configurations, which usually originate from chiral interactions known as Dzyaloshinskii-Moriya interactions. Skyrmion lattices were initially observed in bulk non-centrosymmetric crystals, but have more recently been noted in ultrathin films, where their existence is explained by interfacial Dzyaloshinskii-Moriya interactions induced by the proximity to an adjacent layer with strong spin-orbit coupling. Skyrmions are promising candidates as information carriers for future information-processing devices due to their small size (down to a few nanometres) and to the very small current densities needed to displace skyrmion lattices. However, any practical application will probably require the creation, manipulation and detection of isolated skyrmions in magnetic thin-film nanostructures. Here, we demonstrate by numerical investigations that an isolated skyrmion can be a stable configuration in a nanostructure, can be locally nucleated by injection of spin-polarized current, and can be displaced by current-induced spin torques, even in the presence of large defects.

Large microwave generation from current-driven magnetic vortex oscillators in magnetic tunnel junctions

Spin-polarized current can excite the magnetization of a ferromagnet through the transfer of spin angular momentum to the local spin system. This pure spin-related transport phenomenon leads to alluring possibilities for the achievement of a nanometer scale, complementary metal oxide semiconductor-compatible, tunable microwave generator that operates at low bias for future wireless communication applications. Microwave emission generated by the persistent motion of magnetic vortices induced by a spin-transfer effect seems to be a unique manner to reach appropriate spectral linewidth. However, in metallic systems, in which such vortex oscillations have been observed, the resulting microwave power is much too small. In this study, we present experimental evidence of spin-transfer-induced vortex precession in MgO-based magnetic tunnel junctions, with an emitted power that is at least one order of magnitude stronger and with similar spectral quality. More importantly and in contrast to other spin-transfer excitations, the thorough comparison between experimental results and analytical predictions provides a clear textbook illustration of the mechanism of spin-transfer-induced vortex precession.

Phase-locking of magnetic vortices mediated by antivortices

Synchronized spin-valve oscillators may lead to nanosized microwave generators that do not require discrete elements such as capacitors or inductors. Uniformly magnetized oscillators have been synchronized, but offer low power. Gyrating magnetic vortices offer greater power, but vortex synchronization has yet to be demonstrated. Here we find that vortices can interact with each other through the mediation of antivortices, leading to synchronization when they are closely spaced. The synchronization does not require a magnetic field, making the system attractive for electronic device integration. Also, because each vortex is a topological soliton, this work presents a model experimental system for the study of interacting solitons.

Enhancement of the spin accumulation at the interface between a spin-polarized tunnel junction and a semiconductor.

We report on spin injection experiments at a Co/Al2O3/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop DeltaV at the interface as high as 1.2 mV for a current density of 0.34 nA.microm(-2). This represents a dramatic increase of the spin accumulation signal, well above the theoretical predictions for spin injection through a ferromagnet/semiconductor interface. Such an enhancement is consistent with a sequential tunneling process via localized states located in the vicinity of the Al2O3/GaAs interface. For spin-polarized carriers these states act as an accumulation layer where the spin lifetime is large. A model taking into account the spin lifetime and the escape tunneling time for carriers traveling back into the ferromagnetic contact reproduces accurately the experimental results.

Magnetic and transport properties of Fe/Cr superlattices (invited)

We describe the magnetic and transport properties of Fe(001)/Cr(001) superlattices grown on GaAs (001) by molecular‐beam epitaxy and characterized by reflection high‐energy electron diffraction (RHEED), Auger spectroscopy, x‐ray diffraction, and electron microscopy. For Cr layers thinner than about 30 A the magnetic behavior reveals strong antiferromagnetic couplings between the Fe layers across the Cr layers. Polarized neutron diffraction experiments confirm the existence of an antiferromagnetic superstructure. We discuss the origin of the antiferromagnetic (AF) coupling. The Fe/Cr superlattices with AF interlayer coupling exhibit a giant magnetoresistance: when an applied field aligns the magnetizations of the Fe layers, the resistivity drops by a factor of 2 for some samples. This giant magnetoresistance can be ascribed to the spin dependence of the electron scattering by interfaces. We compare our results with the predictions of two recent theoretical models.

Magnetoresistance of Fe/Cr superlattices

Abstract In light of new experimental data on Fe(001)/Cr(001) superlattices, we discuss the role of the main parameters involved in the giant magnetoresistance: thicknesses, interface roughness and temperature.

Shaped angular dependence of the spin-transfer torque and microwave generation without magnetic field

The generation of oscillations in the microwave frequency range is one of the most important applications expected from spintronics devices exploiting the spin-transfer phenomenon, which is the reorientation of the magnetization of a ferromagnetic domain by spin-polarized current. Here we report transport and microwave power measurements on specially designed nanopillars, for which a non-standard angular dependence of the spin-transfer torque is predicted by theoretical models. We observe a new kind of current-induced dynamics that is characterized by large angle precessions in the absence of any applied field. This is also predicted by simulations including a ‘wavy’ angular dependence of the torque. This type of nanopillar, which is able to generate microwave oscillations in zero applied magnetic field, could represent an interesting method for the implementation of spin-transfer oscillators. We also emphasize the theoretical implications of our results on the angular dependence of the torque.

Inverse spin Hall effect in nanometer-thick yttrium iron garnet/Pt system

High quality nanometer-thick (20 nm, 7 nm, and 4 nm) epitaxial Yttrium Iron Garnet (YIG) films have been grown on gadolinium gallium garnet substrates using pulsed laser deposition. The Gilbert damping coefficient for the 20 nm thick films is 2.3 × 10−4 which is the lowest value reported for sub-micrometric thick films. We demonstrate Inverse spin Hall effect (ISHE) detection of propagating spin waves using Pt. The amplitude and the lineshape of the ISHE voltage correlate well to the increase of the Gilbert damping when decreasing thickness of YIG. Spin Hall effect based loss-compensation experiments have been conducted but no change in the magnetization dynamics could be detected.

Coupling Efficiency for Phase Locking of a Spin Transfer Nano-Oscillator to a Microwave Current

The phase locking behavior of spin transfer nano-oscillators (STNOs) to an external microwave signal is experimentally studied as a function of the STNO intrinsic parameters. We extract the coupling strength from our data using the derived phase dynamics of a forced STNO. The predicted trends on the coupling strength for phase locking as a function of intrinsic features of the oscillators, i.e., power, linewidth, agility in current, are central to optimize the emitted power in arrays of mutually coupled STNOs.

Vertical-current-induced domain-wall motion in MgO-based magnetic tunnel junctions with low current densities

In the past few years, there have been a number of proposals for fabricating magnetic memories based on the current-induced motion of magnetic domain walls. A device that uses a novel geometry for injecting electrical currents into the sample is shown to work with current densities that are two orders of magnitude lower than in previous approaches.