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Dive into the research topics where A. Fischer is active.

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Featured researches published by A. Fischer.


Solid State Phenomena | 2007

Horizontal Versus Vertical Annealing of Silicon Wafers at High Temperatures

G. Kissinger; A. Fischer; G. Ritter; V.D. Akhmetov; M. Kittler

The gravitational induced shear stresses in 200 mm silicon wafers supported in verticaltype or horizontal-type furnace were calculated using 3D-FEM analysis of the displacement vector assuming linear elastic behavior of the anisotropic material. For comparison of the two complex loading cases and for relating the effect of gravitational constraints to the mechanical strength of the wafers, the invariant von Mises shear stress τM was chosen. The computed maximum values of τM demonstrate that the gravitational induced stress for vertical processing is approximately one order of magnitude less than the gravitational induced stress for horizontal processing. The experimental results obtained from processing of 200mm wafers with different oxygen concentration in horizontal and vertical boats at 1200°C are in an excellent agreement with the theoretical simulations.


Archive | 2004

Light emitting semiconductor diode, comprises primary and secondary silicon containing layers of one conductivity, and a third of the opposite conductivity

Tzanimir Arguirov; A. Fischer; M. Kittler; W. Seifert


Solid State Phenomena | 1991

Thermal Wafer Warpage and its Avoidance

A. Fischer; Hans Richter


Archive | 1991

Appts. for processing semiconductor wafers in rapid thermal process - comprising substrate support plate with wafer arranged on it

A. Fischer; Bernd Tillack; Gregor Jatzkowski; R. Banisch; Harald H. Richter; K. Hoeppner; Christian Weber


Archive | 1998

Large diameter, high temperature stable, single crystal semiconductor substrate wafer, for IC production, has an anti-stress layer outside the active region to counteract gravity-induced forces

Frank Hollaender; Dieter Knoll; Beate Kuck; A. Fischer; Hans Richter; Bernd Tillack; Joerg Osten


Journal of Materials Science: Materials in Electronics | 2008

Radially non-uniform interaction of nitrogen with silicon wafers

V.D. Akhmetov; G. Kissinger; A. Fischer; G. Morgenstern; G. Ritter; M. Kittler


Archive | 2003

Semiconductor component used as a MOSFET comprises an active semiconductor region and an insulating region which laterally delimits the active semiconductor region

Rainer Barth; Katrin Blum; Burkhard Prof. Dietrich; A. Fischer; Thomas Grabolla; Ulrich Jagdhold; D. Knoll; Beate Kuck; Harald Dr. Richter; Bernd Tillack


Archive | 2003

Halbleiterbauelement mit verspanntem aktiven Gebiet Semiconductor device strained active region

Rainer Barth; Katrin Blum; Burkhard Prof. Dietrich; A. Fischer; Thomas Grabolla; Ulrich Jagdhold; Dieter Knoll; Beate Kuck; Harald Dr. Richter; Bernd Tillack


Solid State Phenomena | 1999

Equilibrium Critical Thickness of Strained Buried SiGe Layers

A. Fischer; G. Kissinger; Hans Richter; P. Zaumseil


Solid State Phenomena | 1993

Misfit Strain Engineering in Heteroepitaxial Structures

Hans Richter; A. Fischer; H. Kühne; M. Eichler

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Bernd Tillack

Technical University of Berlin

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V.D. Akhmetov

Brandenburg University of Technology

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