A.G. Kazanskii

Visible luminescence from hydrogenated amorphous silicon modified by femtosecond laser radiation

Visible luminescence is observed from the composite of SiO2 with embedded silicon nanocrystallites produced by femtosecond laser irradiation of hydrogenated amorphous silicon (a-Si:H) film in air. The photoluminescence originates from the defect states at the interface between silicon crystallites and SiO2 matrix. The method could be used for fabrication of luminescent layers to increase energy conversion of a-Si:H solar cells.

Effect of the femtosecond laser treatment of hydrogenated amorphous silicon films on their structural, optical, and photoelectric properties

The effect of the femtosecond laser treatment of hydrogenated amorphous silicon (a-Si:H) films on their structural, optical, and photoelectric properties is studied. Under the experimental conditions applied in the study, laser treatment of the film with different radiation intensities induces structural changes that are nonuniform over the film surface. An increase in the radiation intensity yields an increase in the contribution of the nanocrystalline phase to the structure, averaged over the sample surface, as well as an increase in the conductance and photoconductance of the samples. At the same time, for all of the samples, the absorption spectrum obtained by the constant-photocurrent method has a shape typical for those of amorphous silicon. Obtained results indicate the possibility of a-Si:H films photoconductance increase by femtosecond pulse laser treatment.

Photoconductivity of two-phase hydrogenated silicon films

Electrical, photoelectric, and optical properties of hydrogenated amorphous silicon films with various ratios between the nanocrystalline and amorphous phases in the structure of the material have been studied. On passing from an amorphous to a nanocrystalline structure, the room-temperature conductivity of the films increases by more than five orders of magnitude. With increasing fraction of the nanocrystalline component in the film structure, the steady-state photoconductivity varies nonmonotonically and is determined by the variation in the carrier mobility and lifetime. Introduction of a small fraction of nanocrystals into the amorphous matrix leads to a decrease in the absorption in the defect-related part of the spectrum and, accordingly, to a lower concentration of dangling bonds, which are the main recombination centers in amorphous hydrogenated silicon. At the same time, the photoconductivity in these films becomes lower, which may be due to appearance of new centers that are related to nanocrystals and reduce the lifetime of nonequilibrium carriers.

Giant birefringence and dichroism induced by ultrafast laser pulses in hydrogenated amorphous silicon

A femto- and picosecond laser assisted periodic nanostructuring of hydrogenated amorphous silicon (a-Si:H) is demonstrated. The grating structure with the subwavelength modulation of refractive index shows form birefringence (Δn ≈ −0.6) which is two orders of magnitude higher than commonly observed in uniaxial crystals and femtosecond laser nanostructured silica glass. The laser-induced giant birefringence and dichroism in a-Si:H film introduce extra dimensions to the polarization sensitive laser writing with applications that include data storage, security marking, and flat optics.

Laser material processing with tightly focused cylindrical vector beams

We demonstrate a comprehensive modification study of silica glass, crystalline silicon, and amorphous silicon film, irradiated by tightly focused cylindrical vector beams with azimuthal and radial polarizations. The evidence of the longitudinal field associated with radial polarization is revealed by second harmonic generation in z-cut lithium niobate crystal. Despite the lower threshold of ring-shaped modification of silicon materials, the modification in the center of single pulse radially polarized beam is not observed. The phenomenon is interpreted in terms of the enhanced reflection of longitudinal component at the interface with high-index contrast, demonstrating that the longitudinal component is inefficient for the flat surface modification. Enhanced interaction of the longitudinal light field with silicon nanopillar structures produced by the first pulse of double-pulse irradiation is also demonstrated.

Dynamics of Staebler-Wronski effect in hydrogenated amorphous silicon

Abstract The dependence of photoconductivity and absorption in the photon region of 0.8–1.4 eV in hydrogenated amorphous silicon (a-Si:H) have been measured as a function of illumination time and incident light power. The experimental results can be explained by the change of recombination mechanism of excess carriers during illumination or by the photogeneration of defects with different creation dynamics.

Features of the structure and defect states in hydrogenated polymorphous silicon films

The structural and electronic properties of thin hydrogenated polymorphous silicon films obtained by plasma-enhanced chemical vapor deposition from hydrogen (H2) and monosilane (SiH4) gas mixture have been studied by means of transmission electron microscopy, electron paramagnetic resonance (EPR) spectroscopy, and Raman spectroscopy. It has been established that the studied films consist of the amorphous phase containing silicon nanocrystalline inclusions with the average size on the order of 4–5 nm and the volume fraction of 10%. A signal was observed in the hydrogenated polymorphous silicon films during the EPR investigation that is attributed to the electrons trapped in the conduction band tail of microcrystalline silicon. It has been shown that the introduction of a small fraction of nanocrystals into the amorphous silicon films nonadditively changes the electronic properties of the material.

Photoelectrical properties of microcrystalline silicon films

Abstract Lightly boron-doped microcrystalline silicon (μc-Si:H) films with a low dark conductivity and a high photosensitivity are used for a systematic investigation of the steady-state (SSPC) and transient photoconductivity (TPC). We find that the photoelectronic properties are only determined by the crystalline components of this mixed-phase material but not by the residual amorphous silicon (a-Si:H). Nevertheless, the behaviour of SSPC and TPC are to a great extent similar to that of a-Si:H. This suggests that in μc-Si:H there is a similar distribution of gap states (band-tail states, dangling bonds) as in a-Si:H. The weak dependence of SSPC on the photon flux may be due to the presence of long-range potential fluctuations caused by inhomogeneously distributed charged defects.

Influence of the fabrication conditions of polymorphous silicon films on their structural, electrical and optical properties

The structural, optical, and photoelectric properties of polymorphous silicon films produced by plasma-enhanced chemical vapor deposition from a mixture of monosilane and hydrogen at high pressure are studied. Variations in the pressure of the gas mixture used for film production barely change the Raman spectra of the films, but induce changes in the photoconductivity and in the absorption spectrum obtained by the constant-photocurrent technique. The experimentally observed change in the optical and photoelectric parameters of the films is attributed to some structural changes induced in the films by variations in the deposition parameters.

Specific features of photoelectric and optical properties of amorphous hydrogenated silicon films produced by plasmochemical deposition from monosilane–hydrogen mixture

Photoelectric and optical properties of amorphous hydrogenated silicon films produced by plasmochemical deposition from a monosilane-hydrogen mixture have been studied at a fraction of hydrogen in the mixture that corresponds to the onset of formation of a nanocrystalline phase in the structure of the films obtained. A behavior untypical of amorphous hydrogenated silicon films is observed for the photoconductivity and the spectral dependence of the absorption coefficient. The temperature dependences of the photoconductivity in the films under study are found to vary with the energy of incident photons. At a photon energy of 1.3 eV, temperature quenching of photoconductivity is observed. Prolonged illumination of the films led to a certain decrease in the absorption coefficient at photon energies in the range 1.2–1.5 eV. The results obtained are attributed to the possible presence of silicon nanocrystals in the structure of the films and to the influence of these nanocrystals on their photoelectric and optical properties.