A. G. Mironov

Electron energies and states at the deep impurity level in a semiconductor

The problem of the model description of the electron state at the deep impurity level in a semiconductor is solved. The potential of the impurity center is chosen as the superposition of a Coulomb field and a spherical quantum well with a flat bottom. The energy level and the wave function of the ground state are determined by the exact method and the variational Ritz method in wide ranges of parameters of the well. An algorithm for determining the energies and wave functions of the first excited states is presented. The advantages of the variational method over the exact solution are demonstrated.

Asymptotic behavior of electron wave functions in disordered granular materials

For weakly localized electrons in disordered granular materials, the wave function decay length that determines the spatial decrease of the wave functions in the superlocalization mode is calculated. The dependence of the decay length on the energy and structural parameters of the system is established.

The effect of exchange interaction on the energy spectrum of electrons in doped intentionally disordered superlattices

The electron density distribution is calculated for a doped superlattice with controlled vertical disorder caused by fluctuations of the layer thicknesses (quantum well widths) in the growth direction. At low temperatures, the exchange interaction leads to an increase in the scatter of quantum confinement levels and the formation of a soft gap in the electron density distribution over quantum wells of the superlattice.

The Capture of Electrons by Negatively Charged Impurity Atoms in N-Type Germanium

It is well known that the capture of an electron by an impurity atom is governed by two factors; (1) the electric charge on the impurity atom, and (2) the way in which the electron loses energy in its transition from the conduction band to a captured state. We have studied the dependence of capture rate on the external electric field at law temperature (20°K) for n-Ge containing gold centres as impurities.