A. G. Petukhov

Ferromagnetism and spin-polarized charge carriers in In2 O3 thin films

We present evidence for spin-polarized charge carriers in

Magnetism of Cr-doped diamond-like carbon

{\text{In}}_{2}{\text{O}}_{3}

Robust magnetic polarons in type-II (Zn,Mn)Te/ZnSe magnetic quantum dots

films. Both

Quantum computing on long-lived donor states of Li in Si

{\text{In}}_{2}{\text{O}}_{3}

Magnetism in Closed-Shell Quantum Dots: Emergence of Magnetic Bipolarons

and Cr doped

Electron spin polarization in resonant interband tunneling devices

{\text{In}}_{2}{\text{O}}_{3}

Spin-dependent resonant tunneling through semimetallic ErAs quantum wells in a magnetic field.

films exhibit room-temperature ferromagnetism after vacuum annealing, with a saturation moment reaching approximately

Schottky barrier formation at ErAs/GaAs interfaces : A case of Fermi level pinning by surface states

0.5\text{ }\text{emu}/{\text{cm}}^{3}

Time-resolved magnetophotoluminescence studies of magnetic polaron dynamics in type-II quantum dots

for the Cr doped samples. We used point contact Andreev reflection measurements to directly determine the spin polarization, which was found to be approximately

Atomic Spin Scattering and Giant Magnetoresistance in Magnetic Semiconductors

50%\ifmmode\pm\else\textpm\fi{}5%