A. G. Rodríguez

Determination of the optical energy gap of Ge1−xSnx alloys with 0<x<0.14

The optical energy gap of Ge1−xSnx alloys has been determined from transmittance measurements, using a fast-Fourier-transform infrared interferometer. Our results show that the change from indirect to direct band gap occurs at a lower critical Sn concentration (xc) than the value predicted from the virtual crystal approximation, tight binding, and pseudopotential models. However, a close agreement between the experimental results and the predictions with deformation potential theory is observed. The concentration xc, which is theoretically expected to be 0.09, actually it is observed to lie between 0.10

Nonlinear behavior of the energy gap in Ge1−xSnx alloys at 4K

The optical energy gap of Ge1−xSnx alloys (x⩽0.14) grown on Ge substrates has been determined by performing transmittance measurements at 4K using a fast fourier transform infrared interferometer. The direct energy gap transitions in Ge1−xSnx alloys behave following a nonlinear dependence on the Sn concentration, expressed by a quadratic equation, with a so called bowing parameter b0 that describes the deviation from a simple linear dependence. Our observations resulted in b0RT=2.30±0.10eV and b04K=2.84±0.15eV, at room temperature and 4K, respectively. The validity of our fit is limited for Sn concentrations lower than 15%.

Ge1−xSnx alloys pseudomorphically grown on Ge(001)

Ge1−xSnx alloys were grown on Ge(001) substrates in a conventional rf sputtering system. We determined the in-plane and in-growth lattice parameters, as well as the alloy bulk lattice parameter of the alloys for different Sn concentrations by high resolution x-ray diffraction. The Sn concentration was determined assuming Vegard’s law for the alloy lattice parameter. At low concentrations, we observed that Ge1−xSnx layers have pseudomorphic characteristics for layer thickness from 320 to 680 nm. These characteristics of Ge1−xSnx layers agree with the People and Bean critical thickness model. This structural study opens the possibility of growing dislocation-free Ge1−xSnx alloys below the critical thickness.

Influence of growth direction on order–disorder transition in (GaAs)1−x(Ge)2x semiconductor alloys

We provide direct evidence of the dependence of the critical concentration of IV-type atoms at the order–disorder transition in ternary metastable (III–V)–IV, zincblende–diamond semiconductor alloys on the growth direction. The excellent agreement between the experimental and model predicted critical concentrations is evidence that the atomic ordering in these alloys is ruled almost entirely by substrate geometry. In this letter, we report the observation of the critical concentration dependence on substrate orientation in (GaAs)1−x(Ge2)x metastable alloys, epitaxially grown on (001), (111), (112), and (113) oriented GaAs. A different long-range order parameter behavior with Ge concentration is obtained for each growth direction. The Ge critical concentrations observed are 0.36, 0.96, 0.59, and 0.50±0.03, for the orientations listed above, values that compare well with those obtained from a Monte Carlo simulation of the growth, 0.33, 1.0, 0.64, and 0.54, respectively.

Determination of the Thermal Expansion Coefficient of Single-Wall Carbon Nanotubes by Raman Spectroscopy

We have examined the effect of high temperature on single-wall carbon nanotubes under air and nitrogen ambient by Raman spectroscopy. We observe the temperature dependence of the radial breathing mode and the G-band modes. The thermal expansion coefficient (β) of the bundled nanotubes is obtained experimentally using the estimated volume from Raman scattering. β behaves linearly with temperature from 0.33 × 10−5 K−1 to 0.28 × 10−5 K−1 in air and from 0.58 × 10−5 K−1 to 0.47 × 10−5 K−1 in nitrogen ambient, respectively. The temperature dependence of the radial breathing mode Raman frequencies is consistent with a pure temperature effect.

Infrared study of the absorption edge of β-InN films grown on GaN/MgO structures

Infrared optical studies were carried out in a group of cubic InN samples grown by gas source molecular beam epitaxy on MgO (001) substrates. Room temperature (RT) reflectance and low-temperature (LT) transmittance measurements were performed by using fast Fourier transform infrared spectrometry. Reflectance fittings allowed to establish that β-InN films have large free-carrier concentrations present (>1019 cm−3), a result that is corroborated by Hall effect measurements. Each sample explored exhibited a different optical absorption edge. The Varshni parameters that describe adequately the optical absorption edge responses with temperature are obtained for the set of samples studied. The observed temperatures changes, from LT to RT, are the lowest reported for III-V semiconductor binary compounds. The temperature coefficient of the conduction band depends on the strength of the electron–phonon interaction (e-ph-i), as well as on the thermal expansion. It has been predicted that cubic InN has one of the sm...

Critical thickness of β-InN/GaN/MgO structures

InN films were grown on MgO substrates with a β-GaN buffer layer using the gas source molecular beam epitaxy technique. Initially, at typical growth rates from 0.09 to 0.28 ML/sec and at 500 °C substrate temperature, the growth was performed in a layer by layer way as revealed by in situ reflection high-energy electron diffraction (RHEED). In all samples studied, a critical thickness of ∼5 ML in InN pseudomorphic layer was measured with a frame by frame analysis of RHEED patterns recorded on video. After reaching critical thickness, the InN films undergo a relaxation process, going from two-dimensional growth to three-dimensional, as evidenced by the transformation of the RHEED patterns that change from streaky to spotty. Depending on the In cell temperature, either nanocolumnar InN or flat cubic final films are grown, as can be corroborated by scanning electron microscopy. The experimental critical thickness (hc) value of 5 ML is compared to values calculated from different critical thickness models.

Growth of strained-layer GaAs'Ge superlattices by magnetron sputtering: Optical and structural characterization

Strained layer superlattices of GaAs/Ge/GaAs and Ge/GaAs/Ge have been grown by magnetron sputtering of different intercalated layer thickness. The samples exhibited good crystallographic quality, pseudomorphic growth on the substrate, as well as superlattice characteristics. Layer periodicity, concentration profile and the thicknesses of the resultant films were examined by high-resolution x-ray diffraction, secondary ion mass spectroscopy, infrared (IR) optical transmission measurements, and Raman spectroscopy. The heterostructures exhibited IR attenuation peaks in transmission between 0.5 and 1.0 eV, whose energy position was characterized as a function of the thickness of the intercalated thinner layers. The combined results of these techniques reveal that the intended GaAs layers are in fact composed of (GaAs)1−x(Ge2)x alloys with a few percent Ge content. Experimental and theoretical results have been modeled with the transmittance model, which assumes that light hits the surface normally and takes t...

Long-range order–disorder transition in (GaAs)1−x(Ge2)x grown on GaAs(001) and GaAs(111)

Abstract We have grown (GaAs)1−x(Ge2)x layers on GaAs substrates of both (100) and (111) orientations. High-resolution X-ray diffraction is used to study the zincblende–diamond transition. Our experiments show that the (GaAs)1−x(Ge2)x layers grown on (111) substrates do not present a long-range order–disorder transition for any Ge concentration (except for x=1). This fact gives the first reported evidence for the confirmation of Holloway and Davis theoretical prediction that the growth direction should have an influence in the long-range order parameter.

Chemical and surface analysis during evolution of arsenopyrite oxidation by Acidithiobacillus thiooxidans in the presence and absence of supplementary arsenic

Bioleaching of arsenopyrite presents a great interest due to recovery of valuable metals and environmental issues. The current study aims to evaluate the arsenopyrite oxidation by Acidithiobacillus thiooxidans during 240h at different time intervals, in the presence and absence of supplementary arsenic. Chemical and electrochemical characterizations are carried out using Raman, AFM, SEM-EDS, Cyclic Voltammetry, EIS, electrophoretic and adhesion forces to comprehensively assess the surface behavior and biooxidation mechanism of this mineral. These analyses evidence the formation of pyrite-like secondary phase on abiotic control surfaces, which contrast with the formation of pyrite (FeS2)-like, orpiment (As2S3)-like and elementary sulfur and polysulfide (Sn(2-)/S(0)) phases found on biooxidized surfaces. Voltammetric results indicate a significant alteration of arsenopyrite due to (bio)oxidation. Resistive processes determined with EIS are associated with chemical and electrochemical reactions mediated by (bio)oxidation, resulting in the transformation of arsenopyrite surface and biofilm direct attachment. Charge transfer resistance is increased when (bio)oxidation is performed in the presence of supplementary arsenic, in comparison with lowered abiotic control resistances obtained in its absence; reinforcing the idea that more stable surface products are generated when As(V) is in the system. Biofilm structure is mainly comprised of micro-colonies, progressively enclosed in secondary compounds. A more compact biofilm structure with enhanced formation of secondary compounds is identified in the presence of supplementary arsenic, whereby variable arsenopyrite reactivity is linked and attributed to these secondary compounds, including Sn(2-)/S(0), pyrite-like and orpiment-like phases.