A. Garreau

10 Gbit/s PON demonstration using a REAM-SOA in a bidirectional fiber configuration up to 25 km SMF

A REAMSOA chip is characterized as part of an ONU in single-pass and then bidirectional upstream 10 Gbit/s PON configurations. Chromatic dispersion and Rayleigh backscattering impacts are assessed.

A hybrid electroabsorption modulator device for generation of high spectral-efficiency optical modulation formats

We report a novel hybrid integrated optic device consisting of AlGaInAs/InP electroabsorption modulators and a four-arm silica-on-silicon planar lightwave circuit optical interferometer. The device is designed for generation of high spectral efficiency optical modulation formats. We demonstrate generation of 21.4 Gb/s quadrature phase shift keyed optical signals with electrical data drives of 2V(pp) amplitudes, achieving a bit error rate of 10(-9) with the required optical signal to noise ratio of ~18 dB in a 0.1 nm resolution bandwidth.

10Gbit/s Amplified Reflective Electroabsorption Modulator for Colourless Access Networks

For high speed remote colorless modulation in FTTH technology, a new 10Gbit/s monolithically integrated amplified reflective electroabsorption modulator (R-EAM-SOA) is demonstrated over 50nm spectral range and over 20°C-60°C, with excellent eye diagrams.

10 Gbit/s drop and continue colorless operation of a 1.5μm AlGalnAs reflective amplified electroabsorption modulator

AlGalnAs large spectral range EAM has been integrated with SOA using Single Active Layer technology. The device operates as a 10Gbit/s drop & continue colorless element in a 50nm spectral range up 60°C

10 Gbit/s Semi-Insulating Buried Heterostructure Loss-less Reflective Amplified Modulator for Wavelength Agnostic Networks

We integrated an AlGalnAs modulator-amplifier using semi-insulating buried hetrostructure and selective area growth. The reflective component exhibits insertion gain, operates at 10Gbit/s over 80nm and links bi-directional 10km SMF up to 60°C.

Pulse-carver-free 50-Gb/s RZ-DQPSK generation using hybrid photonic-integrated electroabsorption modulators

We report generation of 50-Gb/s RZ-DQPSK signal, without an external pulse carver, using an electroabsorption modulators-based hybrid modulator. We demonstrate the first error-free 50-Gb/s RZ-DQPSK generation using a semiconductor-based modulator with low drive voltages of 2.3 V.

A hybrid photonic-integrated electroabsorption modulator device for 50-Gb/s DQPSK generation

We report a compact hybrid photonic-integrated optical device consisting of AlGaInAs/InP electroabsorption modulators and a four-arm silica-on-silicon planar lightwave circuit optical interferometer. We use the device to generate 50-Gb/s NRZ-DQPSK signal with excellent performances comparable to those of the commercial lithium niobate DQPSK modulators, while requiring only 2.5Vpp drive signals.

80-Gb/s RZ-OOK generation using hybrid photonic-integrated electroabsorption modulators and 40G electronics

We report generation of 80-Gb/s RZ-OOK signals using a hybrid photonic integrated electroabsorption device. We achieve this using electronics having a bandwidth of 40 GHz or less and without using an external optical pulsed source.

Using optical injection of Fabry-Perot lasers for high-speed access in optical telecommunications

In this paper we present our recent works on optical injection of Fabry-Perot laser diode for application in access networks. The injection-locked Fabry-Perot laser diode is used as low-cost colorless transmitters for high-speed optical access exploiting wavelength-division-multiplexing technology. The modification of main characteristics of Fabry-Perot laser such as spectral properties, noise and modulation is shown in injection-locking regime. The strong dependence of these properties onto injection parameters is also given. Finally, the operation of injection-locked Fabry-Perot laser diode in a wavelength-division-multiplexed optical access system using a novel multi-wavelength master source based on quantum-dash mode-locked laser is presented and its transmission performances at 2.5 Gb/s are reported.

10 Gbit/s Coolerless Operation of a New AlGalnAs Single Active Layer Electroabsorption Modulated Laser with Self Thermal Compensation

Single Active Layer is used for self thermal compensation of threshold and power variation in AlGalnAs EML. 90km SMF up to 60°C and 50km SMF up to 70°C trans missions are demonstrated.