A. Gloskovskii

Improvement of structural, electronic, and magnetic properties of Co2MnSi thin films by He+ irradiation

The influence of 30 keV He+ ion irradiation on structural, electronic, and magnetic properties of Co2MnSi thin films with a partial B2 order was investigated. It was found that room temperature irradiation with light ions can improve the local chemical order. This provokes changes of the electronic structure and element-specific magnetization toward the bulk properties of a well-ordered Co2MnSi Heusler compound.

Hard x-ray photoelectron spectroscopy of buried Heusler compounds

This work reports on high energy photoelectron spectroscopy from the valence band of buried Heusler thin films (Co2MnSi and Co2FeAl0.5Si0.5) excited by photons of about 6?keV energy. The measurements were performed on thin films covered by MgO and SiOx with different thicknesses from 1 to 20?nm of the insulating layer and additional AlOx or Ru protective layers. It is shown that the insulating layer does not affect the high energy spectra of the Heusler compound close to the Fermi energy. The high resolution measurements of the valence band close to the Fermi energy indicate a very large electron mean free path of the electrons through the insulating layer. The spectra of the buried thin films agree well with previous measurements from bulk samples. The valence band spectra of the two different Heusler compounds exhibit clear differences in the low lying s bands as well as close to the Fermi energy.

Photoemission electron microscopy as a tool for the investigation of optical near fields.

Photoemission electron microscopy was used to image the electrons photoemitted from specially tailored Ag nanoparticles deposited on a Si substrate (with its native oxide SiO(x)). Photoemission was induced by illumination with a Hg UV lamp (photon energy cutoff homega(UV) = 5.0 eV, wavelength lambda(UV) = 250 nm) and with a Ti:sapphire femtosecond laser (homega(l) = 3.1 eV, lambda(l) = 400 nm, pulse width below 200 fs), respectively. While homogeneous photoelectron emission from the metal is observed upon illumination at energies above the silver plasmon frequency, at lower photon energies the emission is localized at tips of the structure. This is interpreted as a signature of the local electrical field therefore providing a tool to map the optical near field with the resolution of emission electron microscopy.

Direct observation of half-metallicity in the Heusler compound Co2MnSi

Ferromagnetic thin films of Heusler compounds are highly relevant for spintronic applications owing to their predicted half-metallicity, that is, 100% spin polarization at the Fermi energy. However, experimental evidence for this property is scarce. Here we investigate epitaxial thin films of the compound Co2MnSi in situ by ultraviolet-photoemission spectroscopy, taking advantage of a novel multi-channel spin filter. By this surface sensitive method, an exceptionally large spin polarization of () % at room temperature is observed directly. As a more bulk sensitive method, additional ex situ spin-integrated high energy X-ray photoemission spectroscopy experiments are performed. All experimental results are compared with advanced band structure and photoemission calculations which include surface effects. Excellent agreement is obtained with calculations, which show a highly spin polarized bulk-like surface resonance ingrained in a half metallic bulk band structure.

Electronic properties of Co2MnSi thin films studied by hard x-ray photoelectron spectroscopy

This work reports on the electronic properties of thin films of the Heusler compound Co2MnSi studied by means of hard x-ray photoelectron spectroscopy (HAXPES). The results of photoelectron spectroscopy from multilayered thin films excited by photons of 2?8?keV are presented. The measurements were performed on (substrate/buffer layer/Co2MnSi(z)/capping layer) multilayers with a thickness z ranging from 0 to 50?nm. It is shown that high energy spectroscopy is a valuable tool for non-destructive depth profiling. The experimentally determined values of the inelastic electron mean free path in Co2MnSi increase from about 19.5 to 67?? on increasing the kinetic energy from about 1.9 to 6.8?keV. The influence of the thermal treatment of Co2MnSi thin films on the electronic properties was also explored. The structure of the thin films is significantly improved by heat treatment as revealed by x-ray diffraction. It was found that the electronic structure of annealed samples as measured by photoelectron spectroscopy is similar to that of a well-ordered bulk reference sample. The samples without heat treatment show strong deviations from the electronic structure of bulk material. The differences between the disordered and the ordered films are also observed in core level spectra. Chemical shifts of about 100?meV are observed at the Mn 2p states. The stronger localization of the Mn d states in the ordered samples is obvious from the multiplet satellite of the Mn 2p3/2 state.

Thermoelectric properties of CoTiSb based compounds

Several CoTiSb based compounds were synthesized and investigated on their thermoelectric properties. The aim was to improve the thermoelectric properties of CoTiSb by the systematic substitution of atoms or the introduction of additional Co into the vacant sublattice. The solid solutions Co1+xTiSb, Co1?yCuyTiSb and CoTiSb1?zBiz were synthesized. X-ray diffraction was used to investigate the crystal structure. The resistivity, the Seebeck coefficient and the thermal conductivity were determined for all compounds in the temperature range from 2 to 400?K. The highest figure of merit for each solid solution is presented. We were able to improve the figure of merit by a factor of approximately seven.

Hard x-ray photoelectron spectroscopy of chalcopyrite solar cell components

Hard x-ray photoelectron spectroscopy is used to examine the partial density of states of Cu(In,Ga)Se2 (CIGSe), a semiconducting component of solar cells. The investigated, thin Cu(In,Ga)Se2 films were produced by multi-stage co-evaporation. Details of the measured core level and valence band spectra are compared to the calculated density of states. The semiconducting type electronic structure of Cu(In,Ga)Se2 is clearly resolved in the hard x-ray photoelectron spectra.

Investigation of a novel material for magnetoelectronics:Co2Cr0.6Fe0.4Al

Heusler compounds are promising candidates for future spintronics device applications. The electronic and magnetic properties of Co2Cr0.6Fe0.4Al, an electron-doped derivative of Co2CrAl, are investigated using circularly polarized synchrotron radiation and photoemission electron microscopy (PEEM). Element specific imaging reveals needle shaped Cr rich phases in a homogeneous bulk of the Heusler compound. The ferromagnetic domain structure is investigated on an element-resolved basis using x-ray magnetic circular dichroism (XMCD) contrast in PEEM. The structure is characterized by micrometre-size domains with a superimposed fine ripple structure; the lateral resolution in these images is about 100 nm. The domains look identical for Co and Fe giving evidence of a ferromagnetic coupling of these elements. No ferromagnetic contrast is observed at the Cr line. Magnetic spectroscopy exploiting XMCD reveals that the lack of magnetic moment, detected in a SQUID magnetometer, is mainly due to the moment of the Cr atom.

In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by hard x-ray photoelectron spectroscopy

Resistive switching in Ti/HfO2/TiN was investigated in-operando by hard x-ray photoelectron spectroscopy. In comparison with the virgin-state, ON- and OFF-states show enhanced Ti/TiOx/HfO2 interface oxidation, resulting from an oxygen-gettering activity of Ti. The formed TiOx layer acts in the resistive switching process as an oxygen reservoir in exchange with the non-stoichiometric HfO2−δ. A Ti1+/Ti3+ valence change redox reaction occurs between OFF- and ON-states. The peak shifts are attributed to space charge potentials created by the varying oxygen vacancy concentration at the interface. A push-pull model of oxygen vacancies as a function of voltage polarity is proposed to describe the mechanism.

Orbital character variation of the Fermi surface and doping dependent changes of the dimensionality in BaFe2-xCoxAs2 from angle-resolved photoemission spectroscopy

From a combination of high resolution angle-resolved photoemission spectroscopy and density functional calculations, we derive information on the dimensionality and the orbital character of the electronic states of BaFe2−xCoxAs2. Upon increasing Co doping, the electronic states in the vicinity of the Fermi level take on increasingly three-dimensional character. Both the orbital variation with kz and the more three-dimensional nature of the doped compounds have important consequences for the nesting conditions and thus possibly also for the appearance of antiferromagnetic and superconducting phases.