A.J. Syllaios

Stoichiometry dependent electron transport and gas sensing properties of indium oxide nanowires

The effect of stoichiometry of single crystalline In2O3 nanowires on electrical transport and gas sensing was investigated. The nanowires were synthesized by vapor phase transport and had diameters ranging from 80 to 100 nm and lengths between 10 and 20 μm, with a growth direction of [001]. Transport measurements revealed n-type conduction, attributed to the presence of oxygen vacancies in the crystal lattice. As-grown In2O3 nanowires were shown to have a carrier concentration of ≈5 × 10(17) cm(-3), while nanowires that were annealed in wet O2 showed a reduced carrier concentration of less than 10(16) cm(-3). Temperature dependent conductivity measurements on the as-grown nanowires and analysis of the thermally activated Arrhenius conduction for the temperature range of 77-350 K yielded an activation energy of 0.12 eV. This is explained on the basis of carrier exchange that occurs between the surface states and the bulk of the nanowire, resulting in a depleted surface layer of thickness of the order of the Debye length (LD), estimated to be about 3-4 nm for the as-grown nanowires and about 10 times higher for the more stoichiometric nanowires. Significant changes in the electrical conductance of individual In2O3 nanowires were also observed within several seconds of exposure to NH3 and O2 gas molecules at room temperature, thus demonstrating the potential use of In2O3 nanowires as efficient miniaturized chemical sensors. The sensing mechanism is dominated by the nanowire channel conductance, and a simple energy band diagram is used to explain the change in conductivity when gas molecules adsorbed on the nanowire surface influence its electrical properties. Less stoichiometric nanowires were found to be more sensitive to oxidizing gases while more stoichiometric nanowires showed significantly enhanced response to reducing gases.

Material considerations for current and next generation microbolometer technology

Electrical conduction in materials used in microbolometer technology, such as vanadium oxide (VOx) and amorphous silicon (a-Si), is via carrier hopping between localized states. The hopping conduction parameters determine the temperature coefficient of resistance (TCR), its temperature dependence, and its relationship to resistivity. The electrical noise has a 1/f component that is also associated to the hopping parameters and thus correlated to TCR. Current research on conduction in cross linked metal nanoparticles organized in an insulating matrix shows that TCR and noise can be controlled independently, potentially allowing for precise tailoring of the detector response for differing applications.