A. K. Kaveev

Terahertz polarization conversion with quartz waveplate sets.

We present the results of calculation and experimental testing of an achromatic polarization converter and a composite terahertz waveplate (WP), which are represented by sets of plane-parallel birefringent plates with in-plane birefringence axis. The calculations took into account the effect of interference, which was especially prominent when plates were separated by an air gap. The possibility of development of a spectrum analyzer design based on a set of WPs is also discussed.

Silicon diffractive optical elements for high-power monochromatic terahertz radiation

This paper presents a fabrication technique and results of studies of silicon binary diffractive optical elements (DOEs): a diffractive lens and a 1 : 2 diffractive beam splitter with an aperture diameter of 30 mm for the terahertz spectral range. The elements were fabricated in two versions: with and without an antireflection coating of parylene C. The DOE characteristics were investigated in the beam of the Novosibirsk free electron laser at a wavelength of 141 μm. The results are given of a study of the radiation resistance of the coating, which remained intact upon exposure to an average radiation power density of 4 kW/cm2; the peak power in a 100 ps pulse was almost 8 MW/cm2. Experimental estimates of the diffraction efficiency of the elements coated with the antireflection coating are in good agreement with theoretical estimates.

Optical elements for focusing of terahertz laser radiation in a given two-dimensional domain

Binary silicon-based diffractive optical element (DOE)—Gaussian-to-Square focuser (diameter of aperture is 30 mm) for the terahertz spectral range has been designed and characterized using terahertz radiation of the Novosibirsk Free Electron Laser (NovoFEL) at the wavelength of 141 μm. The preliminary experiments have demonstrated feasibility of application of binary silicon DOE for focusing of terahertz radiation into pre-given focal domain.

Diffractive lenses for high-power terahertz radiation beams

Techniques for manufacturing silicon binary (two-level) diffractive lenses and polypropylene kinoform diffractive lenses for the terahertz spectrum range are described. The elements are 1 and 0.8 mm thick, respectively. The silicon lens is manufactured in two versions: with no coating and with a parylene C (polyparaxylylene) antireflection coating. Characteristics of the diffractive optical elements are studied in the beam of a pulse-periodic free electron laser at a radiation wavelength of 141 μm and a repetition rate of 5.6MHz. The radiation resistance of the parylene coating, tested on the Novosibirsk free electron laser, was not impaired when the coating was exposed to an average power density of 4 kW cm−2, the peak power in a 100-picosecond pulse being almost 8 MW cm−2.

Focusing of Novosibirsk Free Electron Laser (NovoFEL) radiation into paraxial segment

Abstract We demonstrate results of studies of a silicon binary diffractive optical element (DOE) focusing a terahertz laser Gaussian beam into a paraxial segment. The characteristics of the DOE were examined on a Novosibirsk Free Electron Laser beam of 141-μm wavelength.

Tunable wavelength terahertz polarization converter based on quartz waveplates

We present the results of calculation and experimental testing of the tunable wavelength terahertz polarization converter represented by a set of plane-parallel birefringent plates with an in-plane birefringence axis. An experimental device has been produced and tested. The calculations show that the effect of interference between the interfaces, including air gaps, may be neglected. The considered device may be used as a simple narrow achromatic waveplate, or a Solc band pass filter for the specified wavelength.

Terahertz emission from silicon nanostructures heavily doped with boron

We present the first findings of the terahertz emission from the ultra-narrow p-type silicon quantum well confined by the δ-barriers heavily doped with boron on the n-type Si (100) surface. The THz spectra revealed by the voltage applied along the Si-QW plane appear to result from the radiation of the dipole boron centers.