A. La Rosa

Planar pixel sensors for the ATLAS upgrade: beam tests results

The performance of planar silicon pixel sensors, in development for the ATLAS Insertable B-Layer and High Luminosity LHC (HL-LHC) upgrades, has been examined in a series of beam tests at the CERN SPS facilities since 2009. Salient results are reported on the key parameters, including the spatial resolution, the charge collection and the charge sharing between adjacent cells, for different bulk materials and sensor geometries. Measurements are presented for n+-in-n pixel sensors irradiated with a range of fluences and for p-type silicon sensors with various layouts from different vendors. All tested sensors were connected via bump-bonding to the ATLAS Pixel read-out chip. The tests reveal that both n-type and p-type planar sensors are able to collect significant charge even after the lifetime fluence expected at the HL-LHC.

Test beam results of 3D silicon pixel sensors for the ATLAS upgrade

Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable B-Layer and High Luminosity LHC (HL-LHC) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS inner detector solenoid field. Sensors were bump-bonded to the front-end chip currently used in the ATLAS pixel detector. Full 3D sensors, with electrodes penetrating through the entire wafer thickness and active edge, and double-sided 3D sensors with partially overlapping bias and read-out electrodes were tested and showed comparable performance.

Performance of novel silicon n-in-p planar pixel sensors

The performance of novel n-in-p planar pixel detectors designed for future upgrades of the ATLAS Pixel system is presented. The n-in-p silicon sensors technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness that allow for enlarging the area instrumented with pixel detectors. The n-in-p modules presented here are composed of pixel sensors produced by CiS connected by bump-bonding to the ATLAS read-out chip FE-I3. The characterization of these devices has been performed before and after irradiation up to a fluence of 5×1015 1 MeV neqcm−2. Charge collection measurements carried out with radioactive sources have proven the functioning of this technology up to these particle fluences. First results from beam test data with a 120 GeV/c pion beam at the CERN-SPS are also discussed, demonstrating a high tracking efficiency of (98.6±0.3)% and a high collected charge of about 10 ke for a device irradiated at the maximum fluence and biased at 1 kV.

Monte Carlo simulation of ripple filters designed for proton and carbon ion beams in hadrontherapy with active scanning technique

Proton and carbon ion beams have a very sharp Bragg peak. For proton beams of energies smaller than 100 MeV, fitting with a gaussian the region of the maximum of the Bragg peak, the sigma along the beam direction is smaller than 1 mm, while for carbon ion beams, the sigma derived with the same technique is smaller than 1 mm for energies up to 360 MeV. In order to use low energy proton and carbon ion beams in hadrontherapy and to achieve an acceptable homogeneity of the spread out Bragg peak (SOBP) either the peak positions along the beam have to be quite close to each other or the longitudinal peak shape needs to be broaden at least few millimeters by means of a properly designed ripple filter. With a synchrotron accelerator in conjunction with active scanning techniques the use of a ripple filter is necessary to reduce the numbers of energy switches necessary to obtain a smooth SOBP, leading also to shorter overall irradiation times. We studied the impact of the design of the ripple filter on the dose uniformity in the SOBP region by means of Monte Carlo simulations, implemented using the package Geant4. We simulated the beam delivery line supporting both proton and carbon ion beams using different energies of the beams. We compared the effect of different kind of ripple filters and their advantages.

A method for the inter-calibration of a matrix of sensors

We present a quick and easy method for the calibration of a matrix of sensors. The algorithm is based on a three-step irradiation procedure which relies only on the constancy of the delivered fluence at each step. With this method the gain of each sensor is derived relative to a reference detector. The algorithm has been applied to a matrix of (32 x 32) ionization chambers. After the calibration coefficients have been applied, by comparing the response of the matrix of chambers to a reference detector over a large field, we determined that the fluence measurement of individual chambers is better than 0.7%. The algorithm solves the cumbersome problem of the relative gain calibration of a matrix of a large number of sensors.

Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade

In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-in-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost eectiveness, that allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-in-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the active edge concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for dierent sensor congurations. First preliminary results obtained with the test-structures of the production are shown.

A large dynamic range charge measurement ASIC family for beam monitoring in radiotherapy applications

A family of Application Specific Integrated Circuits ( ASICs ) called TERA have been developed for the readout of pixel and strip gas detectors used in radiotherapy applications. The TERA ASICs are based on the charge balancing integration technique in order to obtain a good linearity over a dynamic range of five order of magnitude.

Investigation of thin n-in-p planar pixel modules for the ATLAS upgrade

In view of the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), planned to start around 2023–2025, the ATLAS experiment will undergo a replacement of the Inner Detector. A higher luminosity will imply higher irradiation levels and hence will demand more radiation hardness especially in the inner layers of the pixel system. The n-in-p silicon technology is a promising candidate to instrument this region, also thanks to its cost-effectiveness because it only requires a single sided processing in contrast to the n-in-n pixel technology presently employed in the LHC experiments. In addition, thin sensors were found to ensure radiation hardness at high fluences. An overview is given of recent results obtained with not irradiated and irradiated n-in-p planar pixel modules. The focus will be on n-in-p planar pixel sensors with an active thickness of 100 and 150 μm recently produced at ADVACAM. To maximize the active area of the sensors, slim and active edges are implemented. The performance of these modules is investigated at beam tests and the results on edge efficiency will be shown.

HV/HR-CMOS sensors for the ATLAS upgrade-concepts and test chip results

In order to extend its discovery potential, the Large Hadron Collider (LHC) will have a major upgrade (Phase II Upgrade) scheduled for 2022. The LHC after the upgrade, called High-Luminosity LHC (HL-LHC), will operate at a nominal leveled instantaneous luminosity of 5× 1034 cm−2 s−1, more than twice the expected Phase I . The new Inner Tracker needs to cope with this extremely high luminosity. Therefore it requires higher granularity, reduced material budget and increased radiation hardness of all components. A new pixel detector based on High Voltage CMOS (HVCMOS) technology targeting the upgraded ATLAS pixel detector is under study. The main advantages of the HVCMOS technology are its potential for low material budget, use of possible cheaper interconnection technologies, reduced pixel size and lower cost with respect to traditional hybrid pixel detector. Several first prototypes were produced and characterized within ATLAS upgrade R&D effort, to explore the performance and radiation hardness of this technology. In this paper, an overview of the HVCMOS sensor concepts is given. Laboratory tests and irradiation tests of two technologies, HVCMOS AMS and HVCMOS GF, are also given.

Novel silicon n-in-p pixel sensors for the future ATLAS upgrades

Abstract In view of the LHC upgrade phases towards HL-LHC the ATLAS experiment plans to upgrade the inner detector with an all silicon system. The n-in-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness that allow for enlarging the area instrumented with pixel detectors. We present the characterization and performance of novel n-in-p planar pixel sensors produced by CiS (Germany) connected by bump bonding to the ATLAS readout chip FE-I3. These results are obtained before and after irradiation up to a fluence of 10 16 1-MeV n eq cm − 2 , and prove the operability of this kind of sensors in the harsh radiation environment foreseen for the pixel system at HL-LHC. We also present an overview of the new pixel production, which is on-going at CiS for sensors compatible with the new ATLAS readout chip FE-I4.