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MRS Proceedings | 1994

Silicon Nitride Ceramic Matrix for CMCs from Silane Derived Si Powders and Preceramic Polymers

Wendell E. Rhine; A. Lightfoot; Dietmar Seyferth; John S. Haggerty

Si powders synthesized by the laser pyrolysis of silane can be nitrided at 1,200--1,250 C, producing an improved reaction bonded silicon nitride. This RBSN is a potential matrix for composites since it can be formed at temperatures which do not degrade the strengths of commercially available amorphous ceramic fibers. However, the density of the RBSN matrix has been limited to about 75% using the silane-derived Si powder. Combining Si powders and preceramic polymers offers an approach for increasing the density and mechanical properties of the reaction-formed Si{sub 3}N{sub 4} matrix. The incorporation of polysilazanes inhibited the nitridation oat 1,250 C, but samples could be effectively nitrided at 1,400 C. These higher nitriding temperatures are compatible with SCS-6 and other low-oxygen, crystalline SiC fibers which can be used as reinforcements for ceramic composites.


Archive | 1995

Net-shape ceramic processing for electronic devices and packages

William L. Robbins; John S. Haggerty; Dennis D. Rathman; W. D. Goodhue; George B. Kenney; A. Lightfoot; R. Allen Murphy; Wendell E. Rhine; Julia Sigalovsky


Journal of the American Ceramic Society | 1989

Oxidation and Fracture Strength of High‐Purity Reaction‐Bonded Silicon Nitride

John S. Haggerty; A. Lightfoot; J. E. Ritter; Paul A. Gennari; Shanti V. Nair


Chemistry of Materials | 1989

Preparation of boron-containing ceramic materials by pyrolysis of the decaborane(14)-derived [B10H12.cntdot.Ph2POPPh2]x polymer

Dietmar Seyferth; William S. Rees; John S. Haggerty; A. Lightfoot


A Collection of Papers Presented at the 14th Annual Conference on Composites and Advanced Ceramic Materials, Part 1 of 2: Ceramic Engineering and Science Proceedings, Volume 11, Issue 7/8 | 2008

Properties of RBSN and RBSN‐SiC Composites

A. Lightfoot; H. L. Ker; John S. Haggerty; J. E. Ritter


Journal of the American Ceramic Society | 2004

Effects of Trace O2 Levels on the Nitriding Kinetics of High‐Purity Silicon Powders

Raju S. Parikh; A. Lightfoot; John S. Haggerty; Brian W. Sheldon


Proceedings of the 19th Annual Conference on Composites, Advanced Ceramics, Materials, and Structures - B: Ceramic Engineering and Science Proceedings, Volume 16, Issue 5 | 2008

Ceramic Matrices and Monoliths Synthesized from a Combination of Reactive Polymers, Fillers and Atmospheres

A. Lightfoot; John S. Haggerty; Wendell E. Rhine


Proceedings of the 15th Annual Conference on Composites and Advanced Ceramic Materials, Part 1 of 2: Ceramic Engineering and Science Proceedings, Volume 12, Issue 7/8 | 1991

Processing and properties of SiC whisker- and particulate-reinforced reaction bonded Si3N4

A. Lightfoot; L. Ewart; John S. Haggerty; Z. Q. Cai; J. E. Ritter; Shanti V. Nair


Proceedings of the 12th Annual Conference on Composites and Advanced Ceramic Materials, Part 1 of 2: Ceramic Engineering and Science Proceedings, Volume 9, Issue 7/8 | 2008

Boron‐Containing Ceramic Materials Derived from Polymeric Precursors: Material Characteristics

A. Lightfoot; William S. Rees; John S. Haggerty


A Collection of Papers Presented at the 13th Annual Conference on Composites and Advanced Ceramic Materials, Part 2 of 2: Ceramic Engineering and Science Proceedings, Volume 10, Issue 9/10 | 1989

Nitriding kinetics of Si-SiC powder mixtures as simulations of reaction bonded Si3N4-SiC composites

A. Lightfoot; Brian W. Sheldon; J. H. Flint; John S. Haggerty

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John S. Haggerty

Massachusetts Institute of Technology

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J. E. Ritter

University of Massachusetts Amherst

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Shanti V. Nair

University of Massachusetts Amherst

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Julia Sigalovsky

Massachusetts Institute of Technology

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Paul A. Gennari

University of Massachusetts Amherst

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Wendell E. Rhine

Massachusetts Institute of Technology

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Dietmar Seyferth

Massachusetts Institute of Technology

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William S. Rees

Massachusetts Institute of Technology

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Dennis D. Rathman

Massachusetts Institute of Technology

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