A. M. Diakonov

High-frequency hopping conductivity in the quantum Hall effect regime: Acoustical studies

The high-frequency conductivity of Si

Acoustoelectric effects in very high-mobility p-SiGe/Ge/SiGe heterostructure

\ensuremath{\delta}

Contactless measurement of alternating current conductance in quantum Hall structures

-doped GaAs/AlGaAs heterostructures is studied in the integer quantum Hall effect (QHE) regime, using acoustic methods. Both the real and the imaginary parts of the complex conductivity are determined from the experimentally observed magnetic field and temperature dependencies of the velocity and the attenuation of a surface acoustic wave. It is demonstrated that in structures with carrier density

Nonlinear high-frequency hopping conduction in two-dimensional arrays of Ge-in-Si quantum dots: Acoustic methods

(1.3\ensuremath{-}2.8)\ifmmode\times\else\texttimes\fi{}{10}^{11}{\mathrm{cm}}^{\ensuremath{-}2}

High-frequency transport in p -type Si ∕ Si 0.87 Ge 0.13 heterostructures studied with surface acoustic waves in the quantum Hall regime

and mobility

DX-centers and long-term effects in the high-frequency hopping conductance in Si-doped GaAs/Al0.3Ga0.7As heterostructures in the quantum Hall regime: acoustical studies

(1\ensuremath{-}2)\ifmmode\times\else\texttimes\fi{}{10}^{5}{\mathrm{cm}}^{2}/\mathrm{V}\mathrm{}\mathrm{s}

AC Conductance in Dense Array of the Ge0.7Si0.3 Quantum Dots in Si

the mechanism of low-temperature conductance near the QHE plateau centers is hopping. It is also shown that at magnetic fields corresponding to filling factors 2 and 4, the doped Si

Acoustoelectric Effects in Ge/Si Nanosystems with Ge Quantum Dots

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Persistent high-frequency hopping photoconductivity in GaAs/AlGaAs heterostructures in the quantum Hall regime

layer efficiently shunts the conductance in the two-dimensional electron gas (2DEG) channel. A method to separate the two contributions to the real part of the conductivity is developed, and the localization length in the 2DEG channel is estimated within the context of a nearest-neighbor hopping model.

Surface acoustic waves (SAW) interaction with 2DES at spin-splitted Landau levels

Measurement results of the acoustoelectric effects [surface acoustic waves (SAW) attenuation and velocity] in a high-mobility p-SiGe/Ge/SiGe structure are presented. The structure was low-energy plasma-enhanced chemical vapor deposition grown with a two-dimensional (2D) channel buried in the strained Ge layer. The measurements were performed as a function of temperature (1.5-4.2 K) and magnetic field (up to 8.4 T) at different SAW intensities at frequencies 28 and 87 MHz. Shubnikov-de Haas-like oscillations of both SAW attenuation and the velocity change have been observed. Hole density and mobility, effective mass, quantum and transport relaxation times, as well as the Dingle temperature were measured with a method free of electric contacts. The effect of heating of the 2D hole gas by the electric field of the SAW was investigated. Energy relaxation time tau(epsilon) and the deformation potential constant determined