A. M. Saletskii

Relaxation under pulsed magnetization reversal of monocrystalline films of (Bi,Lu)3(Fe,Ga)5O12 with (210) orientation

The photoresponse method is used for studying the relaxation process under pulsed magnetization reversal of monocrystalline films with the composition (Bi,Lu)3(Fe,Ga)5O12 with (210) orientation depending on the amplitude and duration of the remagnetizing pulse. Magnetization reversal occurs through the formation, motion, and destruction of an end domain wall.

Effect of Bismuth Ions on the Optical Absorption in Gd3Ga5O12〈Bi〉 Epitaxial Films

Single-crystal gadolinium gallium garnet films containing Bi impurity are grown on (111) Gd3Ga5O12 substrates by liquid-phase epitaxy from Bi2O3–B2O3 fluxes. The absorption spectra of the films are measured from 0.2 to 1.5 μm. The effect of Bi3+ impurity on the optical absorption in the films is examined.

Liquid-phase epitaxy and optical absorption of gadolinium-gallium garnet films grown from a PbO-B2O3 solution melt on Gd3Ga5O12 substrates

The optical absorption due to impurity ions was studied in gadolinium-gallium garnet single crystal films with a stoichiometric composition Gd3Ga5O12 grown by liquid-phase epitaxy from a supercooled PbO-B2O3 solution melt on (111)-oriented Gd3Ga5O12 substrates.

Dynamic Effects Related to the Structural Imperfection of Iron Garnet Epilayers

The dynamic effects due to the presence of transition surface layers (ignored in the existing theories) in single-crystal iron garnet films are considered. Among such effects are the “step” in the pulsed magnetization reversal curve, the enhanced-differential-mobility portion in the magnetic-field dependence of wall velocity, and the achievement of the Woker limit.

Optical absorption by Nd3+ and Gd3+ ions in epitaxial films grown on Gd3Ga5O12 substrates from a lead-containing solution melt

Epitaxial films of composition (Gd,Nd)3Ga5O12 or (Gd,Y,Nd)3Ga5O12 with a neodymium content varying from 0.3 to 15 at. % are grown by liquid-phase epitaxy from a supercooled PbO-B2O3-based solution melt on Gd3Ga5O12(111) substrates. The optical absorption spectra of the epitaxial films grown are measured in the wavelength range 0.2–1.0 µm. The results of interpreting the absorption bands observed in the spectra are used to construct the energy level diagrams of Nd3+ and Gd3+ ions in the matrices of the epitaxial films.

Optical absorption in cobalt-containing single-crystal epitaxial films of gadolinium gallium garnets

Cobalt-containing single-crystal garnet films are grown by liquid-phase epitaxy from supercooled PbO-B2O3-and Bi2O3-B2O3-based solution melts on Gd3Ga5O12 substrates. It is shown that cobalt in the films is in a trivalent state. Upon introduction of GeO2 into the initial solution melt, cobalt transforms into a bivalent state. It is revealed that the absorption spectrum of the grown films exhibits two broad bands in the wavelength ranges 450–800 and 900–1800 nm. Each of these bands contains three components. The spin-orbit splitting of the observed bands is determined.

On the velocity of an end domain wall in (Bi,Lu)3(Fe,Ga)5O12 single-crystal films with (210) orientation

The mobility of an end domain wall in (Bi,Lu)3(Fe,Ga)5O12 single-crystal garnet ferrite films with (210) orientation is determined by the photoresponse method. It is shown that the mobility of end domain walls in these films is considerably higher than that in (111) single-crystal garnet ferrite films free of rapidly relaxing ions.

Luminescence of Nd-doped epitaxial single-crystal garnet films grown on Gd{sub 3}Ga{sub 5}O{sub 12} substrates

Epitaxial films with the atomic concentration of neodymium varied in the range from 1 to 15 % were grown on Gd3Ga5O12 substrates with the orientation (111) by the method of liquid-phase epitaxy from a PbO — B2O3 overcooled melt solution. The absorption spectra of the films are recorded and their luminescence spectra and luminescence lifetimes of active ions are measured upon diode laser pumping. The concentration dependence of the luminescence lifetime of Nd3+ ions is determined.Epitaxial films with the atomic concentration of neodymium varied in the range from 1 to 15 % were grown on Gd{sub 3}Ga{sub 5}O{sub 12} substrates with the orientation (111) by the method of liquid-phase epitaxy from a PbO - B{sub 2}O{sub 3} overcooled melt solution. The absorption spectra of the films are recorded and their luminescence spectra and luminescence lifetimes of active ions are measured upon diode laser pumping. The concentration dependence of the luminescence lifetime of Nd{sup 3+} ions is determined. (active media. lasers)

Optical absorption in Gd3Ga5O12 epitaxial films grown from PbO-B2O3 based fluxed solution

We report the observation of additional optical absorption in single-crystal garnet films with the nominal composition Gd3Ga5O12, grown by liquid-phase epitaxy from a supercooled fluxed solution based on PbO-B2O3.