A. Mircea

1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs

We demonstrate 1.5-/spl mu/m waveband wafer-fused InGaAlAs-InP-AlGaAs-GaAs vertical-cavity surface-emitting lasers (VCSELs) emitting high single-mode power of 1.5 mW at room temperature with sidemode suppression ratio of over 30 dB and a full-width at half-maximum far field angle of 9/spl deg/. These devices have thermal resistance value below 1.5 K/mW and are emitting 0.2 mW at 70/spl deg/C. VCSELs with a wavelength span of 40-nm emission are produced from the same active cavity material, which shows the potential of realizing multiple-wavelength VCSEL arrays.

High-performance single-mode VCSELs in the 1310-nm waveband

High-performance vertical-cavity surface-emitting lasers (VCSELs) emitting in the 1310-nm waveband are fabricated by bonding AlGaAs-GaAs distributed Bragg reflectors on both sides of a InP-based cavity. A 2-in wafer bonding process is optimized to produce very good on-wafer device parameter uniformity. Carrier injection is implemented via double intracavity contact layers and a tunnel junction. A 1.2-mW single-mode output power is obtained in the temperature range of 20/spl deg/C-80/spl deg/C. Modulation capability at 3.2 Gb/s is demonstrated up to 70/spl deg/C. Overall VCSEL performance complies with the requirements of the 10 GBASE-LX4 IEEE.802.3ae standard, which opens the way for novel applications of VCSELs emitting in the 1310-nm band.

Cavity Mode—Gain Peak Tradeoff for 1320-nm Wafer-Fused VCSELs With 3-mW Single-Mode Emission Power and 10-Gb/s Modulation Speed Up to 70

Room-temperature cavity mode red-shift of about 45nm from the photoluminescence peak is found to be optimal for tradeoff between high modulation bandwidth and good high-temperature performance for InAlGaAs(InP)-AlGaAs fused vertical-cavity surface-emitting lasers (VCSELs) employing tunnel junction carrier injection. Single-mode output power up to 5.4 and 3.1 mW, at 25 degC and 75 degC, respectively, and open eye diagrams exhibiting fall time values close to 40 ps at 10-Gb/s modulation up to at least 70 degC have been obtained for such VCSELs emitting at 1320-nm wavelength

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We demonstrate widely tunable InAlGaAs-InP-AlGaAs-GaAs optically pumped vertical-cavity surface-emitting lasers operating in the 1.55-/spl mu/m waveband. The tuning range of 32 nm is achieved by applying a low tuning voltage of 4 V. Maximum single-mode output power of 2 mW with less than 1.5-dB power variation over the whole tuning range and side-mode suppression ratio in excess of 30 dB have been obtained.

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The development of the 10GBASE-LX4 communication standard for aggregated 10-Gb/s rates feeds the need for low-cost laser sources in the 1275-1350-nm wavelength range operating at modulation rates of 3.125 Gb/s. We present comprehensive characterization of wafer fused vertical-cavity surface-emitting lasers with characteristics that meet the IEEE802.3ae specification for 10GBASE-LX4. These include output power greater than 1.5 mW up to 80degC, wavelength around 1340 nm, single-mode emission and modulation at 3.125 Gb/s, and wide open eyes with rise and fall times below 100 ps up to 70degC

1.55-/spl mu/m optically pumped wafer-fused tunable VCSELs with 32-nm tuning range

High performance vertical cavity surface emitting lasers (VCSELs) emitting in the 1310 nm waveband are fabricated by bonding AlGaAs/GaAs distributed Bragg reflectors (DBRs) on both sides of a InP-based cavity containing 5 InAlGaAs quantum wells using the localized wafer fusion technique. A tunnel junction structure is used to inject carriers into the active region. Devices with 7 μm aperture produce single mode emission with 40 dB side-mode suppression ratio. Maximum single mode output power of 1.7 mW is obtained in the temperature range of 20-70°C. Modulation capability at 3.2 Gb/s is demonstrated both at room temperature and 70°C with rise time and fall time values of eye diagrams bellow 120 ps. Overall device performance complies with the requirements of 10 GBASE-LX4 IEEE.802.3ae standard.

3.125-Gb/s modulation up to 70/spl deg/C using 1.3-/spl mu/m VCSELs fabricated with localized wafer fusion for 10GBASE LX4 applications

Polarization stable, wafer-fused 1310 nm VCSELs employing sub-wavelength shallow gratings on their top DBR and emitting 1.5 mW single mode output power in the 20degC-75degC temperature range are demonstrated.

VCSELs emitting in the 1310-nm waveband for novel optical communication applications

We demonstrate polarization stable wafer fused VCSELs operating at 1320 nm wavelength showing record high single mode power of 5.4 and 3.1 mW, at 25deg and 75degC, respectively, and open eye diagrams with 40 ps fall time at 10 Gb/s modulation.