A. Moewes

Material Properties and Structural Characterization of M3Si6O12N2:Eu2+ (M=Ba, Sr)—A Comprehensive Study on a Promising Green Phosphor for pc‐LEDs

The efficient green phosphor Ba(3)Si(6)O(12)N(2):Eu(2+) and its solid-solution series Ba(3-x)Sr(x)Si(6)O(12)N(2) (with x approximately = 0.4 and 1) were synthesized in a radio-frequency furnace under nitrogen atmosphere at temperatures up to 1425 degrees C. The crystal structure (Ba(3)Si(6)O(12)N(2), space group P3 (no. 147), a = 7.5218(1), c = 6.4684(1) A, wR2 = 0.048, Z = 1) has been solved and refined on the basis of both single-crystal and powder X-ray diffraction data. Ba(3)Si(6)O(12)N(2):Eu(2+) is a layer-like oxonitridosilicate and consists of vertex-sharing SiO(3)N-tetrahedra forming 6er- and 4er-rings as fundamental building units (FBU). The nitrogen atoms are connected to three silicon atoms (N3), while the oxygen atoms are either terminally bound (O1) or bridge two silicon atoms (O2) (numbers in superscripted square brackets after atoms indicate the coordination number of the atom in question). Two crystallographically independent Ba(2+) sites are situated between the silicate layers. Luminescence investigations have shown that Ba(3)Si(6)O(12)N(2):Eu(2+) exhibits excellent luminescence properties (emission maximum at approximately 527 nm, full width at half maximum (FWHM) of approximately 65 nm, low thermal quenching), which provides potential for industrial application in phosphor-converted light-emitting diodes (pc-LEDs). In-situ high-pressure and high-temperature investigations with synchrotron X-ray diffraction indicate decomposition of Ba(3)Si(6)O(12)N(2) under these conditions. The band gap of Ba(3)Si(6)O(12)N(2):Eu(2+) was measured to be 7.05+/-0.25 eV by means of X-ray emission spectroscopy (XES) and X-ray absorption near edge spectroscopy (XANES). This agrees well with calculated band gap of 6.93 eV using the mBJ-GGA potential. Bonding to the Ba atoms is highly ionic with only the 4p(3/2) orbitals participating in covalent bonds. The valence band consists primarily of N and O p states and the conduction band contains primarily Ba d and f states with a small contribution from the N and O p states.

Co and Al co-doping for ferromagnetism in ZnO:Co diluted magnetic semiconductors

Co and Al co-doped ZnO diluted magnetic semiconductors are fabricated by a pulsed laser deposition and their electronic structure is investigated using x-ray absorption and emission spectroscopy. The Zn(0.895)Co(0.100)Al(0.005)O thin films grown under oxygen-rich conditions exhibit ferromagnetic behavior without any indication of Co clustering. The Co L-edge and O K-edge x-ray absorption and emission spectra suggest that most of the Co dopants occupy the substitutional sites and the oxygen vacancies are not responsible for free charge carriers. The spectroscopic results and first principles calculations reveal that the ferromagnetism in Co and Al co-doped ZnO semiconductors mainly arises from Al interstitial defects and their hybridization with Co substitutional dopants.

Band gaps and electronic structure of alkaline-earth and post-transition-metal oxides

The electronic structure in alkaline-earth

Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors

Ae\text{O}

Asymmetric pathways in the electrochemical conversion reaction of NiO as battery electrode with high storage capacity

(Ae=\text{Be},\text{ }\text{Mg},\text{ }\text{Ca},\text{ }\text{Sr},\text{ }\text{Ba})

Soft X-ray emission spectroscopy of early transition metal compounds

and post-transition-metal oxides

Grazing incidence optics for soft x‐ray microscopy

Me\text{O}

Electronic structure of Bi M O 3 multiferroics and related oxides

(Me=\text{Zn},\text{ }\text{Cd},\text{ }\text{Hg})