A. P. Micolich

Fractal analysis of Pollock's drip paintings

Scientific objectivity proves to be an essential tool for determining the fundamental content of the abstract paintings produced by Jackson Pollock in the late 1940s. Pollock dripped paint from a can onto vast canvases rolled out across the floor of his barn. Although this unorthodox technique has been recognized as a crucial advancement in the evolution of modern art, the precise quality and significance of the patterns created are controversial. Here we describe an analysis of Pollocks patterns which shows, first, that they are fractal, reflecting the fingerprint of nature, and, second, that the fractal dimensions increased during Pollocks career.

What lurks below the last plateau: experimental studies of the 0.7???2e2/h conductance anomaly in one-dimensional systems

The integer quantised conductance of one-dimensional electron systems is a well-understood effect of quantum confinement. A number of fractionally quantised plateaus are also commonly observed. They are attributed to many-body effects, but their precise origin is still a matter of debate, having attracted considerable interest over the past 15 years. This review reports on experimental studies of fractionally quantised plateaus in semiconductor quantum point contacts and quantum wires, focusing on the 0.7 × 2e(2)/h conductance anomaly, its analogues at higher conductances and the zero-bias peak observed in the dc source-drain bias for conductances less than 2e(2)/h.

Realizing Lateral Wrap-Gated Nanowire FETs: Controlling Gate Length with Chemistry Rather than Lithography.

An important consideration in miniaturizing transistors is maximizing the coupling between the gate and the semiconductor channel. A nanowire with a coaxial metal gate provides optimal gate-channel coupling but has only been realized for vertically oriented nanowire transistors. We report a method for producing laterally oriented wrap-gated nanowire field-effect transistors that provides exquisite control over the gate length via a single wet etch step, eliminating the need for additional lithography beyond that required to define the source/drain contacts and gate lead. It allows the contacts and nanowire segments extending beyond the wrap-gate to be controlled independently by biasing the doped substrate, significantly improving the subthreshold electrical characteristics. Our devices provide stronger, more symmetric gating of the nanowire, operate at temperatures between 300 and 4 K, and offer new opportunities in applications ranging from studies of one-dimensional quantum transport through to chemical and biological sensing.

Zeeman splitting in ballistic hole quantum wires

We have studied the Zeeman splitting in ballistic hole quantum wires formed in a (311)A quantum well by surface gate confinement. Transport measurements clearly show lifting of the spin degeneracy and crossings of the subbands when an in-plane magnetic field B is applied parallel to the wire. When B is oriented perpendicular to the wire, no spin splitting is discernible up to B = 8.8 T. The observed large Zeeman splitting anisotropy in our hole quantum wires demonstrates the importance of quantum confinement for spin splitting in nanostructures with strong spin-orbit coupling.

Ballistic transport in induced one-dimensional hole systems

The authors have fabricated and studied a ballistic one-dimensional p-type quantum wire using an undoped AlGaAs∕GaAs heterostructure. The absence of modulation doping eliminates remote ionized impurity scattering and allows high mobilities to be achieved over a wide range of hole densities and, in particular, at very low densities where carrier-carrier interactions are strongest. The device exhibits clear quantized conductance plateaus with highly stable gate characteristics. These devices provide opportunities for studying spin-orbit coupling and interaction effects in mesoscopic hole systems in the strong interaction regime where rs>10.

The Construction of Jackson Pollock's Fractal Drip Paintings

Between 1943 and 1952, Jackson Pollock created patterns by dripping paint onto horizontal canvases. In 1999 the authors identified the patterns as fractal. Ending 50 years of debate over the content of his paintings, the results raised the more general question of how a human being could create fractals. The authors, by analyzing film that recorded the evolution of Pollocks patterns as a function of time, show that the fractals resulted from a systematic construction process involving multiple layers of painted patterns. These results are interpreted within the context of recent visual perception studies of fractal patterns.

Geometry-induced fractal behaviour in a semiconductor billiard

We report geometry-induced fractal behaviour in the low-field magneto-conductance fluctuations of a mesoscopic semiconductor billiard. Such fractal behaviour was recently predicted to be induced by the mixed (chaotic/regular) phase space generated by the soft-walled billiard potential, and our results constitute a possible experimental observation of the infinite hierarchical nature of this mixed phase space. Preliminary investigations of the effects of temperature and gate bias, which directly control the electron coherence and billiard potential profile, are presented.

InAs Nanowire Transistors with Multiple, Independent Wrap-Gate Segments.

We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a key advantage to this new approach, and the horizontal orientation more generally, is that achieving more than two wrap-gate segments then requires no extra fabrication steps. This is in contrast to the vertical orientation, where a significant subset of the fabrication steps needs to be repeated for each additional gate. We show that cross-talk between adjacent wrap-gate segments is negligible despite separations less than 200 nm. We also demonstrate the ability to make multiple wrap-gate transistors on a single nanowire using the exact same process. The excellent scalability potential of horizontal wrap-gate nanowire transistors makes them highly favorable for the development of advanced nanowire devices and possible integration with vertical wrap-gate nanowire transistors in 3D nanowire network architectures.

Competition between superconductivity and weak localization in metal-mixed ion-implanted polymers

We study the effects of varying the preimplant film thickness and implant temperature on the electrical and superconducting properties of metal-mixed ion-implanted polymers. We show that it is possible to drive a superconductor-insulator transition in these materials via control of the fabrication parameters. We observe peaks in the magnetoresistance and demonstrate that these are caused by the interplay between superconductivity and weak localization in these films, which occurs due to their granular structure. We compare these magnetoresistance peaks with those seen in unimplanted films and other organic superconductors and show that they are distinctly different. ©2010 The American Physical Society

Fabrication of induced two-dimensional hole systems on (311)A GaAs

We demonstrate a method for fabricating induced two-dimensional hole devices in (311)A GaAs. The method uses a metallic p+‐GaAs capping layer as an in situ top gate that pins the Fermi energy close to the valence band, thereby allowing very small gate biases to be used to induce a two-dimensional hole system at a AlGaAs∕GaAs interface. We present transport data from devices with different levels of background impurities. Modeling the mobility as a function of hole density gives a quantitative measure of the level of disorder and indicates that these systems can be used for a systematic study of the effects of disorder in strongly interacting low-dimensional systems.