A. Plais

1-mW CW-RT monolithic VCSEL at 1.55 μm

In this letter, we demonstrate the first result of a high-power (1 mW) continuous-wave room-temperature vertical-cavity surface-emitting laser emitting at 1.55 /spl mu/m using a single InP substrate. The whole structure was grown monolithically using gas source molecular beam epitaxy and incorporates two original approaches. The first originality consists in the growth of a metamorphic GaAs-AlAs Bragg mirror directly on an InP-based cavity. The second novel idea is to use a tunnel junction for current injection. Moreover by using these two approaches the processing is very simple and, therefore, fulfills the goal for low-cost laser production in access and interconnections applications.

Widely Vernier tunable external cavity laser including a sampled fiber Bragg grating with digital wavelength selection

We demonstrate an easy and efficient step tunable sampled fiber Bragg grating (SFBG) external cavity laser. A small current variation applied to a single electrode induces a step tuning of 15 nm based on the Vernier effect between an SFBG with a comb-like reflectivity and a two-section semiconductor laser diode. Thanks to the low current variation of less than 3 mA in the phase section, the output power remains constant within 0.6 dB at 6 dBm. The side-mode suppression ratio is greater than 40 dB over the whole tuning range.

-31 dBm sensitivity of a monolithic transmit-receive-device over wide temperature range

High system performances (-31 dBm), over wide temperature range, were demonstrated by a monolithic in-line transmit-receive-device, designed for single fibre, bi-directional transmission in full-duplex operation at 155 Mbit/s.

1 mW CW RT 1.55 /spl mu/m tunnel VCSEL: thermal and electrical characteristics of GaAs/AlAs metamorphic mirrors

Summary form only given. Recently, high power monolithic VCSELs (1 mW at 1.55 um) have been demonstrated by using tunnel junction injection and a metamorphic AlAs/GaAs mirror. This approach combined with a planar process based on proton implantation might enable the ultra low cost fabrication of 1.55 /spl mu/m laser sources. In the paper we present the optimization of the electrical conductivity of AlAs/GaAs n type metamorphic mirrors and analyze their thermal properties.

Monolithic tunable InP-based vertical-cavity-surface emitting laser

We report on the combination of the well established 1.55 micrometers monolithic VCSELs concept with the Micro-Opto-Electro- Mechanical System (MOEMS) technological breakthrough in order to develop a novel tunable laser device for wavelength division multiplexing optical systems. Technological issures are presented for fabricating surface micromachined InP-based tunable VCSELs.

Implantation optimization for 1.55 /spl mu/m VCSEL

We present the results about the implantation step on the realization of long wavelength VCSELs emitting at 1.55 /spl mu/m. The basic structure is based on a bottom n-doped InP-InGaAsP DBR and a top n-doped GaAs/AlAs metamorphic DBR. The current injection is done through a reverse biased tunnel junction and the current is localized through an implantation step. In this paper we present the influence of the implantation energies and the type of ions (H/sup +/ or O/sup +/) on the laser performance.

Record sensitivity, in full-duplex operation at 155 mbit/s, of a BRS/ridge in-line transmit receive device

Summary form only given. For extensive implementation of fiber-to-the-home (FTTH) networks, low-cost optoelectronic modules featuring bi-directional transmission (transceivers) are required. It is commonly believed that the manufacturing cost-down of the transceivers should be achieved by assembling optoelectronic components on one substrate. Typical examples are the planar light wave circuit platform technology and photonic integrated circuits (PICs). In-line type PIC transceivers, integrating a laser and a photodiode along a straight guide, are very attractive because they are very compact and can be fabricated using well-established industrial technology. We report the system performances at 155 Mbit/s, of an in-line transceiver prototype module emitting at 1.3 /spl mu/m and receiving at 1.55 /spl mu/m Without signal subtraction, a full-duplex sensitivity as low as -21.5 dBm was measured.

-29.5 dBm sensitivity value, in full-duplex operation at 155 Mbit/s, of an in-line transmit-receive-device

A -29.5 dBm sensitivity was measured, in full-duplex operation at 155 Mbit/s, by using an in-line transmit-receive-device. The evaluation of a coaxial package demonstrates the interest of this very simple approach for the mass production of low cost modules.

A very simple and efficient widely tunable sampled fiber Bragg grating external cavity laser

A current variation less than 3 mA applied to a single electrode induces a step tuning of 15 nm in a sampled fiber Bragg grating external cavity laser. The output power is 6 dBm and side mode rejection -40dB.

Low cost PIC transceiver thermo optic modules fulfilling FSAN specifications

The demonstration of the FSAN class B sensitivity with 0 dBm emitted power in fiber points out the interest of this solution for the fabrication of customer module. Moreover, this approach combining an ultra-compact PIC circuit, a preamplifier and a small size connectorized module, opens a new technology breakthrough for the mass production of low cost modules for the access networks.