A. Podhorodecki

Effects of Si-rich oxide layer stoichiometry on the structural and optical properties of Si QD/SiO2 multilayer films

The effects of the stoichiometry of the Si-rich oxide (SRO) layer, O/Si ratio, on the structural and optical properties of SRO/SiO2 multilayer films were investigated in this work. SRO/SiO2 multilayer films with different O/Si ratios were grown by a co-sputtering technique, and Si quantum dots (QDs) were formed with post-deposition annealing. By transmission electron microscopy (TEM) and glancing incidence x-ray diffraction (GIXRD), it was found that the Si QD size decreases with increases in O/Si ratio. The photoluminescence (PL) spectrum varies with the O/Si ratio in band position, shape and intensity. In addition, it was observed that the absorption edge blue-shifts with increases in the O/Si ratio. The change in the absorption edge is consistent with strengthening quantum confinement effects in Si QDs, as indicated by TEM and GIXRD. The optical properties were also investigated by 2D photoluminescence excitation (2D-PLE) and lifetime measurements. The origin of emission and absorption is discussed based on the absorption, PL, 2D-PLE and decay time measurements.

Controlled Synthesis of Tuned Bandgap Nanodimensional Alloys of PbSxSe1−x

Truly alloyed PbS(x)Se(1-x) (x = 0-1) nanocrystals (∼5 nm in size) have been prepared, and their resulting optical properties are red-shifted systematically as the sulfur content of the materials increases. Their optical properties are discussed using a modified Vegards approach and the bowing parameter for these nanoalloys is reported for the first time. The alloyed structure of the nanocrystals is supported by the energy-filtered transmission electron microscope images of the samples, which show a homogeneous distribution of sulfur and selenium within the nanocrystals. X-ray photoelectron spectroscopy studies on ligand-exchanged nanocrystals confirmed the expected stoichiometry and various oxidized species.

Selective excitation of Eu3+ in the core of small β-NaGdF4 nanocrystals

The influence of the nanocrystal matrix on the optical properties of lanthanide dopants is investigated with europium ions used as local crystal field probes. The analysis is performed on small NaYF4 and NaGdF4 nanocrystals obtained by the thermolysis of the corresponding metal trifluoroacetates. An important role in the synthesis is played by trioctylphosphine oxide which induces the crystallization of nanocrystals with small diameters (∼5 to 6 nm). In such small particles, the energy transfer from gadolinium to europium ions is studied with photoluminescence, photoluminescence excitation and time-resolved experiments. We demonstrate that excited gadolinium ions efficiently transfer their energy to europium, and their photoluminescence spectra depend on the nanocrystal size. This is contrary to the direct excitation of Eu3+ ions, which produces size-dependent emission corresponding to the surface to volume ratio of europium sites. Finally, we propose that Gd3+ ions transfer their energy mainly to the Eu3+ in the core of the nanocrystals. These observations provide a base for the optically controlled emission from only the core of the nanocrystals.

Influence of Annealing on Excitation of Terbium Luminescence in YAlO3 Films Deposited onto Porous Anodic Alumina

Terbium-doped yttrium-aluminum oxide films were synthesized by spin-on deposition on porous anodic alumina grown on a silicon wafer and annealed from 400 to 1100°C. An influence of the annealing temperature on the terbium photoluminescence (PL) was studied using two-dimensional PL excitation and time-resolved spectroscopy. Further, a comparison of thermal quenching data for the most intensive 5 D 4 → 7 F 5 luminescence band of Tb 3+ ions was performed for 10-300 K. From the resultant data, the mechanisms of Tb excitation and its dependence on the annealing conditions are proposed and discussed.

Photoluminescence from GaN nanopowder: The size effect associated with the surface-to-volume ratio

Nanosized GaN powder with the average grain size changing from ∼10to∼30nm has been obtained by combustion method with some modifications and its optical properties have been investigated by photoluminescence (PL). The GaN band-gap-related PL band at ∼3.4eV and surface-related PL bands centered at ∼2.0 and ∼2.8eV have been observed for this powder. The relative intensities between observed PL bands change in favor of the surface-related PL band with the decrease of the grain size. This phenomenon has been attributed to the change in the surface-to-volume ratio.

Multicolor light emitters based on energy exchange between Tb and Eu ions co-doped into ultrasmall β-NaYF4 nanocrystals

Multicolor emission is reported from ultrasmall (<10 nm) β-NaYF4:Eu,Tb nanocrystals depending on the excitation wavelengths or emission detection delay time. Detailed optical investigations of three samples (NaYF4:Eu, NaYF4:Tb and NaYF4:Eu,Tb) obtained by a co-thermolysis method have been carried out. Photoluminescence, photoluminescence excitation and emission decay time obtained at different excitation wavelengths have been measured. Excitation mechanisms of Eu and Tb ions have been explained based on the experimental results and calculations using Judd–Ofelt theory. It has been shown that efficient energy transfer from Tb to Eu ions accounts for the efficient red emission of NaYF4:Tb,Eu nanocrystals.

Change in photoluminescence spectra of Eu-doped GaN powders due to the aggregation of nanosized grains into micrometer-sized conglomerations

In this letter, we report a phenomenon of the aggregation of nanocrystalline grains of GaN:Eu into micrometer-sized conglomerates having optical properties different from those of the initial GaN:Eu grains. The nanocrystalline GaN:Eu powders exhibit no emission related to the GaN band gap and a very broad yellow/red PL band associated with recombination in the GaN host matrix via surface states, in addition to the strong Eu3+-related emission, i.e., the D05→FJ7 transitions with J=1, 2, 3, and 4. For the microcrystalline powders, the yellow/red photoluminescence (PL) band disappears and a strong PL band related to the GaN band gap arises. In addition, the Eu3+-related transitions start to split into individual lines typical of Eu-doped bulk-like GaN crystals. These differences in PL spectra have been correlated with the surface/volume ratio of the GaN grains. It has been concluded that, for very small grains (<50nm), surface states determine the optical properties of GaN:Eu powders. Postgrowth processing, ...

On the nature of the stretched exponential photoluminescence decay for silicon nanocrystals

The influence of hydrogen rate on optical properties of silicon nanocrystals deposited by sputtering method was studied by means of time-resolved photoluminescence spectroscopy as well as transmission and reflection measurements. It was found that photoluminescence decay is strongly non-single exponential and can be described by the stretched exponential function. It was also shown that effective decay rate probability density function may be recovered by means of Stehfest algorithm. Moreover, it was proposed that the observed broadening of obtained decay rate distributions reflects the disorder in the samples.

Effect of annealing and Nd concentration on the photoluminescence of Nd3+ ions coupled with silicon nanoparticles

We report on the microstructure and photoluminescence(PL) properties of Nd-doped SiO2 thin films containing silicon nanoparticles (Si-np) as a function of the annealing temperature and the Nd concentration. The thin films, which were grown on Si substrates by reactive magnetron co-sputtering, contain the same Si excess. Fourier transform infrared (FTIR)spectra show that a phase separation occurs during the annealing due to the agglomeration of the Si excess resulting in the formation of Si-np. Besides, after annealing, the films exhibit PL from excitonic states confined in Si-np. We showed that the intensity of the PL of Nd3+ions that occurs at ∼0.92, 1.06, and 1.4 μm is maximal at low Nd concentration and while well-passivated Si-np are formed. FTIR and x-ray measurements showed that the increase in the Nd incorporation has detrimental effects on the PL of Nd3+ because of the formation of Nd2O3nanocrystals and inherent disorder in the SiO2 host matrix. PL excitation measurements demonstrate that the PL of Nd3+ions is nonresonant and follows the excitation of Si-np giving new evidence of the energy transfer from Si-np toward the rare earth ions.

Correlation between stress and carrier nonradiative recombination for silicon nanocrystals in an oxide matrix

Silicon nanocrystals embedded in an oxide matrix formed in a multilayer architecture were deposited by the magnetron sputtering method. By means of Raman spectroscopy we have found that compressive stress is exerted on the silicon nanocrystal core. The stress varies as a function of silicon concentration (O/Si ratio) in the silicon-rich oxide (SRO) layers, which can be attributed to the changing nanocrystal environment. By conducting the time-resolved spectroscopy experiment, we demonstrate that, depending on the nanocrystal surroundings, a different amount of nonradiative recombination sites participates in the excited carrier relaxation process, leading to changes of the relative quantum yield of photoluminescence.