A. Pozza

Characterization of the First Prototypes of Silicon Photomultiplier Fabricated at ITC-irst

This paper reports on the electrical characterization of the first prototypes of Geiger-Mode Avalanche Photodiodes (GM-APDs) and Silicon Photomultipliers (SiPMs) produced at ITC-irst, Trento. Both static and functional measurements have been performed in dark condition. The static tests, consisting in reverse and forward IV measurements, have been performed on 20GM-APDs and 90 SiPMs. The breakdown voltage, the quenching resistance value and the current level have been proved to be very uniform. On the other hand, the analysis of the dark signals allowed the extraction of important properties such as the dark count rate, the gain, the after-pulse and optical cross-talk (in case of the SiPMs) rates. These parameters have been evaluated as a function of the bias voltage, showing trends perfectly compatible with the theory of the device

Novel Silicon Photomultipliers for PET Applications

Silicon photomultipliers (SiPMs) with quantum efficiency maximized for a wavelength between 420 and 470 nm have been developed at ITC-irst Trento (Italy), and are being tested for their application in the construction of a ultra high resolution small animal PET tomograph. The devices have an area of 1 mm times 1 mm and 625 microcells. The breakdown voltage is around 30 V, and the gain of the order of 106. The intrinsic timing resolution is 70 ps rms at the single photoelectron level. The first tests as readout for scintillators show an energy resolution of 21% FWHM with Na-22 employing LSO crystals. The first matrices of SiPMs have been produced and are being tested.

New results on the characterization of ITC-irst Silicon Photomultipliers

In this paper we report briefly on the development of Silicon Photomultipliers at ITC-irst. First, details on the technology and geometry are given. Then, experimental data are shown including static IV characterization, signal characterization, noise properties and photodetection efficiency.