A. Radu

Nanowire-templated microelectrodes for high-sensitivity pH detection

A highly sensitive pH capacitive sensor has been designed by confined growth of vertically aligned nanowire arrays on interdigited microelectrodes. The active surface of the device has been functionalized with an electrochemical pH transducer (polyaniline). We easily tune the device features by combining lithographic techniques with electrochemical synthesis. The reported electrical LC resonance measurements show considerable sensitivity enhancement compared to conventional capacitive pH sensors realized with microfabricated interdigited electrodes. The sensitivity can be easily improved by changing only the thickness of the functional layer.

Optical analogues of chiral fermions in graphene

We show that the propagation of chiral fermions in graphene can be mimicked in other optical structures besides photonic bandgap crystals with Dirac points. More precisely, we demonstrate that the particular form of the transmission coefficient at an interface in graphene between regions with different parameters can be retrieved in optics in either isotropic, gyrotropic and electro-optic materials or in complex conjugate materials. Quantitative analogies are found, at least in some parameter range, between optical and quantum parameters for which the transmission coefficient is similar in the optical and quantum cases, and hence the optical fields and quantum wavefunctions propagate in a similar manner.

Steering and collimating ballistic electrons with amphoteric refraction

We show that amphoteric refraction of ballistic electrons, i.e., positive or negative refraction depending on the incidence angle, occurs at an interface between an isotropic and an anisotropic medium and can be employed to steer and collimate electron beams. The steering angle is determined by the materials’ parameters, but the degree of collimation can be tuned in a significant range by changing the energy of ballistic electrons.

Temperature Dependent Resistivity and Hall Effect in Proton Irradiated CdS Thin Films

Cadmium sulphide finds extensive applications in a variety of optoelectronic devices. In particular, CdS thin films are suitable for use as windows in heterojunction solar cells that employ CdTe, Cu2S or CuInSe2 as an absorber. Such thin film based solar cells are well suited for use in space technology. For that specific application, it is important to know how ionizing radiations alter their performance. We have investigated the effects of irradiation with high energy protons (3 MeV), at 1014 fluency, on electrical properties of polycrystalline CdS thin layers. The samples were prepared by thermal vacuum deposition from single source onto optical glass substrate. Temperature dependent electrical resistivity and Hall effect, before and after irradiation, were recorded from 300 K down to 4 K. The experimental results can be explained in the frame of a two‐band model. Above 100 K electrical properties are controlled by a defect level of donor type, with an ionization energy of about 0.060 eV. The possible origin of this defect is discussed.Cadmium sulphide finds extensive applications in a variety of optoelectronic devices. In particular, CdS thin films are suitable for use as windows in heterojunction solar cells that employ CdTe, Cu2S or CuInSe2 as an absorber. Such thin film based solar cells are well suited for use in space technology. For that specific application, it is important to know how ionizing radiations alter their performance. We have investigated the effects of irradiation with high energy protons (3 MeV), at 1014 fluency, on electrical properties of polycrystalline CdS thin layers. The samples were prepared by thermal vacuum deposition from single source onto optical glass substrate. Temperature dependent electrical resistivity and Hall effect, before and after irradiation, were recorded from 300 K down to 4 K. The experimental results can be explained in the frame of a two‐band model. Above 100 K electrical properties are controlled by a defect level of donor type, with an ionization energy of about 0.060 eV. The possible ...