A. Redondo-Cubero

Depth-resolved analysis of spontaneous phase separation in the growth of lattice-matched AlInN

We report the detection of phase separation of an Al1?xInxN/GaN heterojunction grown close to lattice-matched conditions (x ~ 0.18) by means of Rutherford backscattering spectrometry in channelling geometry and high-resolution x-ray diffraction. An initial pseudomorphic growth of the film was found, with good single crystalline quality, the nominal composition and very low strain state. After ~50?nm, a critical thickness is reached at which the InN molar fraction of the films drops to ~15% and at the same time the single crystalline quality of the films degrade drastically. This spontaneous effect cannot be ascribed to strain relaxation mechanisms since both techniques show a good single crystalline growth of the ternary under lattice matched conditions.

Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen

We studied the optical properties of metalorganic chemical vapour deposited (MOCVD) InGaN/GaN multiple quantum wells (MQW) subjected to nitrogen (N) implantation and post-growth annealing treatments. The optical characterization was carried out by means of temperature and excitation density-dependent steady state photoluminescence (PL) spectroscopy, supplemented by room temperature PL excitation (PLE) and PL lifetime (PLL) measurements. The as-grown and as-implanted samples were found to exhibit a single green emission band attributed to localized excitons in the QW, although the N implantation leads to a strong reduction of the PL intensity. The green band was found to be surprisingly stable on annealing up to 1400°C. A broad blue band dominates the low temperature PL after thermal annealing in both samples. This band is more intense for the implanted sample, suggesting that defects generated by N implantation, likely related to the diffusion/segregation of indium (In), have been optically activated by the thermal treatment.

Selective ion-induced intermixing and damage in low-dimensional GaN/AlN quantum structures

Ion-induced intermixing and damage is evaluated in GaN/AlN superlattices of quantum dots (QDs) and quantum wells (QWs) using 100 keV Ar(+) implantation at low temperature (15 K). Despite the similar damage build up at low fluences, a significant increase of the damage accumulation takes place for QDs at high fluences. Elemental depth profiles were fitted with a diffusion model, revealing the higher intermixing efficiency in QD superlattices, significantly higher than for QWs. The scaling of diffusion length with the local fluence and defect concentration is understood on the basis of cascade mixing and migration of defects in the cation sublattice. The selective intermixing/damage of QDs is explained by the promotion of lateral diffusion mechanisms that result in smooth interfaces, as well as by an enhanced diffusivity due to the characteristic strain distribution in QD superlattices.

Independence of interrupted coarsening on initial system order: ion-beam nanopatterning of amorphous versus crystalline silicon targets

Interrupted coarsening (IC) has recently been identified as an important feature for the dynamics of the typical length-scale in pattern-forming systems on surfaces. In practice, it can be beneficial to improve pattern ordering since it combines a certain degree of defect suppression with a limited increase in the typical pattern wavelength. However, little is known about its robustness with respect to changes in the preparation of the initial system for cases with potential applications. Working in the context of nano-scale pattern formation by ion-beam sputtering (IBS), we prove that IC properties do not depend on sample preparation. Specifically, interface dynamics under IBS is quantitatively compared on virgin amorphous and crystalline silicon surfaces, using 1 keV Ar(+) ions at normal incidence where nanodot pattern formation is triggered by concurrent co-deposition of Fe atoms during processing. Atomic force microscopy shows that dot patterns with similar spatial order and dynamics are obtained in both cases, underscoring the key dynamical role of the amorphous surface layer produced by irradiation. Both systems have been quantitatively described by an effective interface equation. We employ a new procedure based on the linear growth of the initial surface correlations to accurately estimate the equation coefficients. Such a method improves the predictive power of the interface equation with respect to previous studies and leads to a better description of the experimental pattern and its dynamical features.

Influence of metal co-deposition on silicon nanodot patterning dynamics during ion-beam sputtering.

We address the impact of metal co-deposition in the nanodot patterning dynamics of Si(100) surfaces under normal-incidence 1 keV Ar(+) ion-beam sputtering (IBS). In particular, the effect of both the metal nature (Fe or Mo) and flux has been studied. Morphological and compositional evolution were followed by atomic force microscopy (AFM) and Rutherford backscattering spectrometry, respectively. For the same type of impurity, the dynamics is faster for a higher co-deposition flux, which also drives to larger asymptotic roughness and wavelength. Mo co-deposition yields rougher surfaces for a lower metal coverage than Fe and, remarkably, higher ordered patterns. X-ray photoelectron spectroscopy reveals the formation of silicide bonds even before pattern onset, stressing the relevant role of the affinity of the co-deposited metals for silicon. Further, current-sensing AFM performed at the initial and asymptotic stages indicates that the nanodot structures are metal-rich, resulting in coupled compositional and morphological patterns. These results are discussed in terms of phase segregation, morphology-driven local flux variations of impurities and silicide formation. This analysis reveals that the underlying (concurrent) mechanisms of pattern formation are complex since many processes can come into play with a different relative weight depending on the specific patterning conditions. From a practical point of view, it is shown that, by proper selection of the process parameters, IBS with metal co-deposition can be used to tune the dynamics and pattern properties and, interestingly, to produce highly ordered arrays.

Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction.

The built-in piezoelectric fields in group III-nitrides can act as road blocks on the way to maximizing the efficiency of opto-electronic devices. In order to overcome this limitation, a proper characterization of these fields is necessary. In this work nano-beam electron diffraction in scanning transmission electron microscopy mode has been used to simultaneously measure the strain state and the induced piezoelectric fields in a GaN/AlN multiple quantum well system.

Self-organised silicide nanodot patterning by medium-energy ion beam sputtering of Si(100): local correlation between the morphology and metal content.

We have produced self-organised silicide nanodot patterns by medium-energy ion beam sputtering (IBS) of silicon targets with a simultaneous and isotropic molybdenum supply. Atomic force microscopy (AFM) studies show that these patterns are qualitatively similar to those produced thus far at low ion energies. We have determined the relevance of the ion species on the pattern ordering and properties. For the higher ordered patterns produced by Xe(+) ions, the pattern wavelength depends linearly on the ion energy. The dot nanostructures are silicide-rich as assessed by x-ray photoelectron spectroscopy (XPS) and emerge in height due to their lower sputtering yield, as observed by electron microscopy. Remarkably, a long wavelength corrugation is observed on the surface which is correlated with both the Mo content and the dot pattern properties. Thus, as assessed by electron microscopy, the protrusions are Mo-rich with higher and more spaced dots on their surface whereas the valleys are Mo-poor with smaller dots that are closer to each other. These findings indicate that there is a correlation between the local metal content of the surface and the nanodot pattern properties both at the nanodot and the large corrugation scales. These results contribute to advancing the understanding of this interesting nanofabrication method and aid in developing a comprehensive theory of nanodot pattern formation and evolution.

Ion damage overrides structural disorder in silicon surface nanopatterning by low-energy ion beam sputtering

We investigate the role of the initial structural condition in silicon surface nanopatterning by low-energy ion beam sputtering. Specifically, we address the influence of the target atomic structure in ripple formation under oblique irradiation by 500 eV ions. To this end, we compare results obtained on single-crystal, amorphous, and pre-implanted silicon targets. In spite of the differences in terms of structural order, and in contrast to previous results for medium energies, surface dynamics are found to be quantitatively similar in all these systems. We explain our results through molecular dynamics simulations of the initial irradiation stages, with the conclusion that the damage induced by low-energy ion bombardment overrides the initial atomic state of the silicon target, irrespectively of its preparation method and allows silicon re-using for nanostructuring.

Atomistic model of ultra-smooth amorphous thin film growth by low-energy ion-assisted physical vapour deposition

The growth of ultra-smooth amorphous thin films induced by low-energy (below 1 keV) ion-assistance processes is studied. The relative contribution of ion-induced smoothening effects is analysed by means of a Monte Carlo model and experimental data. In general, highly rough granular or ultra-smooth (with roughness below one monolayer) films are produced depending on the competition between surface shadowing and ion-induced adatom mobility and sputtering. The ultra-smooth growth regime is experimentally and theoretically consistent with the Edwards–Wilkinson growth mode, which is related to the ion-induced enhancement of surface mobility. Overall, the framework and the fundamentals to analyse this type of growth are developed and discussed. (Some figures may appear in colour only in the online journal)

High-resolution hydrogen profiling in AlGaN/GaN heterostructures grown by different epitaxial methods

Hydrogen (H) incorporation into AlGaN/GaN heterostructures used in high electron mobility transistors, grown by different methods, is studied by high-resolution depth profiling. Samples grown on sapphire and Si(1 1 1) substrates by molecular-beam epitaxy and metal–organic vapour phase epitaxy; involving H-free and H-containing precursors, were analysed to evaluate the eventual incorporation of H into the wafer. The amount of H was measured by means of nuclear reaction analysis (NRA) using the 1H(15N,αγ)12C reaction up to a depth of ~110 nm into the heterostructures. Interestingly, the H profiles are similar in all the samples analysed, with an increasing H content towards the surface and a negligible H incorporation into the GaN layer (0.24 ± 0.08 at%) or at the AlGaN/GaN interface. Therefore, NRA shows that H uptake is not related to the growth process or technique employed and that H contamination may be due to external sources after growth. The eventual correlation between topographical defects on the AlGaN surface and the H concentration are also discussed.