A.S.H. Liao

Ion implantation of Si and Se donors in In0.53Ga0.47As

Ion implantation of Si and Se donors in In0.53Ga0.47As is reported. Both room‐temperature and elevated temperature (200 °C) implants are performed. Rapid thermal annealing as well as conventional furnace anneals have been used. Both species yield relatively shallow profiles with peak electron concentrations ∼1×1019 cm−3 and with sheet resistance less than 20 Ω/sq. Our results indicate that elevated temperature implants are effective in reducing implant damage and are important for heavy ions like Se+ to achieve high activation and mobility.

Monolithic integration of a planar embedded InGaAs p-i-n detector with InP depletion-mode FET's

We report the operation of a fully integrated p-i-n FET circuit based on a planar embedded In0.53Ga0.47As p-i-n detector and load resistor with InP depletion-mode FETs. The structure employs selective growth of InGaAs on a semi-insulating InP substrate and selective ion implantation of Si and Be into the InP and InGaAs, respectively. For a 10-9bit error rate at 1.54 m, the circuit achieves a sensitivity of -34 dBm at 90 Mbit/s and -29.5 dBm at 295 Mbit/s.

Beryllium implantation doping of InGaAs

Ion implantation doping of Be acceptors in n‐In0.53Ga0.47As is reported. A significant improvement in peak concentration, depth control, and solubility is achieved with rapid (30 s) thermal anneals compared to conventional 15‐min furnace anneals, resulting in p‐n junction depths less than 1 μm with peak acceptor concentrations greater than 1018 cm−3. Electrical profiles and p‐n junction characteristics are presented.

An In 0.53 Ga 0.47 As/Si 3 N 4 n-channel inversion mode MISFET

We describe the operation of an n-channel inversion-mode In<inf>0.53</inf>Ga<inf>0.47</inf>As MISFET with a Si<inf>3</inf>N<inf>4</inf>insulating layer. This device exhibits a transconductance of 2 mS/mm, which represents an order of magnitude improvement over previously reported In<inf>0.53</inf>Ga<inf>0.47</inf>As MISFET results.

An In 0.53 Ga 0.47 As p-channel MOSFET with plasma-grown native oxide insulated gate

We describe the operation of an In 0.53 Ga 0.47 As p-channel inversion mode MOSFET with plasma grown native oxide insulated gate. This device exhibits a transconductance of 4 mS/mm and an effective channel mobility of more than 50% of the bulk hole mobility. This device is the first demonstration of a native oxide insulated gate MOSFET in the In 1-x Ga x As y P 1-y material system.

A planar embedded InGaAs photodiode on semi-insulating InP substrate for monolithically integrated PIN-FET receivers, using selective vapor phase epitaxy and ion implantation technique

We report a new embedded InGaAs PIN photodetector structure on semi-insulating InP substrate, using selective VPE growth process and Be implantation technique. The outstanding features of this structure are that it is essentially planar and minimizes parasitic capacitance by having its bonding pads on a semi-insulating substrate, making it ideally suitable for integrating with high performance InGaAs or InP FETs. Good material quality of the selectively grown VPE InGaAs and the viability of Be implantation technique for forming detector quality p-n junctions in this material were demonstrated by the excellent characteristics of our detector.

Be‐implanted In0.53Ga0.47As diodes with ideal forward current‐voltage characteristics

The temperature dependence of the forward current‐voltage characteristics of Be‐implanted p+‐n junctions in In0.53Ga0.47As is presented. The results are interpreted on the basis of a diffusion current component and a recombination current component. The best diodes obey a pure diffusion current equation, J=J0(T)exp(qV/kT) for a current range of five decades and for temperatures above 200 K.

Electron transport in In0.53Ga0.47As/plasma oxide inversion layers

In this letter we report the first direct measurements of low field transport properties for inversion layer electrons in an InGaAs native oxide metal‐oxide‐semiconductor structure. Our results show that these electrons have a low field mobility which varies from 3000 to 4500 cm2/Vs, compared with 1500 cm2/Vs measured in field‐effect transistor structures. We also deduce a surface state density NSS =1.5×1013 cm−2 eV−1 near the conduction‐band edge.

Integrated Photoreceivers For Long Wavelength Communications Systems - Is The Technology Ready?

The optoelectronic properties of In0.53Ca0.47As, grown lattice matched to InP, suggest that a high performance integrated photoreceiver for use in fiber communications systems operating in the 1.3-1.5 μm spectral band is possible. Research directed at demonstrating such a system is reviewed in this article.

In 0.53 Ga 0.47 As/Si 3 N 4 n-channel and p-channel inversion mode MISFET's

We describe the operation of both n-channel and p-channel Si<inf>3</inf>N<inf>4</inf>insulated gate In<inf>0.53</inf>Ga<inf>0.47</inf>As inversion mode MISFETs. These devices exhibit a maximum transconductance of 4mS/mm which represents a significant improvement over previously reported In<inf>0.53</inf>Ga<inf>0.47</inf>As MISFET results.