A. S. Petrov

Influence of an ultrahigh -frequency electric field on the parameters of p-type indium antimonide

Using an ultrahigh-frequency, noncontact resonator method, the Influence of an electric field on the conductivity and the minority carrier lifetime in p-type InSb at 80‡K was studied. The conductivity of p-type InSb increased with increasing electric field; this effect was attributed to an increase in the carrier concentration as a result of impact (shock) iontzation, while the change taking place in the minority carrier lifetime was attributed to charge exchange in the recombination centers.

Analysis of photoconductor receivers with microwave biasing

An expression has been derived for the threshold sensitivity of microwave-biased photoconductor receivers taking into account the detector, microwave amplifier, and video amplifier noise for different resonator connections.

Parametric-amplifier study of photodiode noise

The noise of diffused and alloyed germanium photodiodes was studied over the frequency range from 2 kHz to 20 MHz. A photodiode noise factor is introduced to describe the noise. The intrinsic noise, which may exceed the shot noise, depends on the shape of the current-voltage characteristic. The noise due to fluctuations in light intensity was measured.

Synchronization of gas-laser modes during modulation of the dielectric constant of the medium

In a calculation of the regions in which the modes of a gas laser are synchronized during modulation of the dielectric constant of the laser medium, two synchronization regions are found. The synchronization band in one of them is much higher than that in the other. The calculated results are confirmed experimentally, and it is shown that when the modes are synchronized the fluctuations in the radiation intensity are 20–30 dB below their level in the absence of synchronization.

Behavior of semiconductors in an SHF electric field

ConclusionsThese experimental results have shown that when an shf electric field is applied to a small semiconducting sample there is a redistribution of free carriers in the sample, which results in an increase in the carrier concentration near the sample boundaries and a decrease in the center. Carrier trapping at the sample surface has a pronounced effect on this redistribution.Since the carrier redistribution and trapping at the surface may significantly affect the characteristics of several practical devices in which small semiconducting samples are used, it is worthwhile to pursue the theoretical and experimental study of this behavior.